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参数资料
| 型号： | SBL2035PT |
| 厂商： | LITE-ON ELECTRONICS INC |
| 元件分类： | 整流器 |
| 英文描述： | 20 A, 35 V, SILICON, RECTIFIER DIODE |
| 封装： | PLASTIC, TO-3P, 3 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 72K |
| 代理商： | SBL2035PT |
VRMS
VDC
VRRM
I(AV)
IFSM
VF
IR
@TC
=95 C
SBL2030PT thru 2060PT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
℃
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Maximum Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum forward
Voltage at 10A DC (Note 1)
20
250
0.55
TJ
Operating Temperature Range
-55 to +125
C
TSTG
Storage Temperature Range
-55 to +150
C
Typical Thermal Resistance (Note 3)
R0JC
2.5
C/W
CJ
Typical Junction Capacitance
per element (Note2)
600
pF
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@TJ =100 C
@TJ =25 C
1
50
mA
V
A
V
UNIT
V
CHARACTERISTICS
SYMBOL
SBL
2040PT
40
28
40
SBL
2030PT
30
21
30
SBL
2035PT
35
24.5
35
SBL
2060PT
60
42
60
SBL
2050PT
50
35
50
SBL
2045PT
45
31.5
45
0.75
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification
94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
MECHANICAL DATA
Case : TO-3P molded plastic
Polarity : As marked on the body
Weight : 0.2 ounces, 5.6 grams
Mounting position :Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0VDC.
3. Thermal Resistance Junction to Case.
TO-3P
PIN 1
PIN 3
PIN 2
CASE
E
L
Q
P
N
M
F
C
B
A
O
K
J
I
H
G
D
L
PIN
1
2
3
SCHOTTKY BARRIER RECTIFIERS
REVERSE VOLTAGE - 30 to 60 Volts
FORWARD CURRENT - 20 Amperes
All Dimensions in millimeter
DIM.
A
C
D
E
F
G
B
M
L
K
J
I
H
O
P
N
Q
TO-3P
MIN.
MAX.
15.75
16.25
21.75
21.25
19.60
20.10
4.38
3.78
1.88
2.08
4.87
5.13
1.90
2.16
1.22
1.12
2.90
3.20
5.20
5.70
2.10
2.40
0.76
0.51
2.93
3.22
1.93
2.18
20 TYP
4.4TYP.
10 TYP
SEMICONDUCTOR
LITE-ON
REV. 3, Aug-2007, KTHD03
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