参数资料
型号: SBL3030PT
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 参考电压二极管
英文描述: 30 A, 30 V, SILICON, RECTIFIER DIODE
封装: TO-3P, 3 PIN
文件页数: 2/2页
文件大小: 135K
代理商: SBL3030PT
RATING AND CHARACTERISTIC CURVES
SBL3030PT thru SBL3045PT
FIG.1- FORWARD CURRENT DERATING CURVE
0
5
10
15
20
25
30
35
0
25
50
75
100
125
CASE TEMPERATURE, ( C)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
0
50
100
150
200
250
300
1
10
100
NUMBER OF CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL REVERSE CHARACTERISTICS
0.001
0.01
0.1
1
10
100
0
20
40
60
80
100
120
PERCENT OF RATED PEAK REVERSE VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
FIG.4- TYPICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
INSTANTANEOUS FORWARD VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
1000
10000
0.1
1
10
100
REVERSE VOLTAGE, (V)
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
FIG.6- DC REVERSE VOLTAGE DERATING CURVE
0
20
40
60
80
100
120
0
25
50
75
100
125
AMBIENT TEMPERATURE, (
℃)
P
E
R
C
E
N
T
O
F
D
C
R
E
V
E
R
S
E
V
O
L
T
A
G
E
,
(%
)
O
Without heat sink,
Rth j-c=8.5°C/W
Tj=25°C
Tj=25°C,
PULSE WIDTH 300us,
2% Duty Cycle
8.3ms Single Half Sine-Wave
Rth j-c=1.6°C/W
Tj=100°C
RESISTIVE OR INDUCTIVE LOAD
Tj=25°C, f=1MHz
L42xH25xW25mm_black Aluminum
finny heat sink, Rthj-a : 7°C/W
Without heat sink, Rthj-a : 26°C/W
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