参数资料
型号: SBL3045PT
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 88K
描述: DIODE SCHOTTKY 30A 45V TO3P-3
产品变化通告: End Of Life 10/June/2010
标准包装: 30
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 15A
电流 - 在 Vr 时反向漏电: 1mA @ 45V
电流 - 平均整流 (Io)(每个二极管): 30A
电压 - (Vr)(最大): 45V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3P
包装: 管件
DS23018 Rev. 11 - 3
1 of 3
www.diodes.com
SBL3030PT - SBL3060PT
? Diodes Incorporated
NOT RECOMMENDED
FOR NEW DESIGN
SBL3030PT - SBL3060PT
30A SCHOTTKY BARRIER RECTIFIER
Features
?
Schottky Barrier Chip
?
Guard Ring Die Constructi
on for Transient Protection
?
Low Power Loss, High Efficiency
?
High Surge Capability
?
High Current Capability and Low Forward Voltage Drop
?
For Use in Low Voltage, High Frequency Inverters, Free
Wheeling, and Polarity Protection Application
?
Lead Free Finish, RoHS Compliant (Note 3)
Mechanical Data
?
Case: TO-3P
?
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Finish - Tin. Solderable per MIL-STD-202,
Method 208
?
Polarity: As Marked on Body
?
Ordering Information: See Page 3
?
Marking: Type Number
?
Weight: 5.6 grams (approximate)
A
B
E
G
J
L
M
N
P
Q
K
S
M
H
R
D
C
TO-3P
Dim Min Max
A
1.88 2.08
B
4.87 5.13
C
21.25 21.75
D
19.60 20.10
E
2.10 2.40
G
0.51 0.76
H
15.75 16.25
J
1.93 2.18
K
2.90?
3.20?
L
3.78 4.38
M
5.20 5.70
N
1.12 1.22
P
1.90 2.16
Q
2.93 3.22
R
11.70 12.80
S
4.40 Typical
All Dimensions in mm
Maximum Ratings and Electrical Characteristics @T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol SBL
SBL
SBL
3030PT
3035PT
3040PT
3045PT
3050PT
SBL
SBL
SBL
3060PT
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
30 35 40 45 50 60 V
RMS Reverse Voltage
VR(RMS)
21 24.5 28 31.5 35 42 V
Average Rectified Output Current @ TC
= 95
°C
(Note 1)
IO
30 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
275 A
Forward Voltage Drop @ IF
= 15A, T
C
= 25
°C VFM
0.55 0.70 V
Peak Reverse Current @ TC
= 25
°C
at Rated DC Blocking Voltage @ TC
= 100
°C
IRM
1.0
75
mA
Typical Total Capacitance (Note 2)
CT
1100 pF
Typical Thermal Resistance Junction to Case (Note 1)
RθJc
2.0
°C/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
°C
Notes: 1. Thermal resistance junction to case mounted on heatsink.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. RoHS revision 13.2.2003. Glass and high temperature solder exemptions applied, see EU Directive Annex Notes 5 and 7.
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