参数资料
型号: SBL30L30CTW
厂商: LITE-ON SEMICONDUCTOR CORP
元件分类: 整流器
英文描述: 30 A, 32 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: PLASTIC PACKAGE-3
文件页数: 1/2页
文件大小: 135K
代理商: SBL30L30CTW
SBL30L30CTW
SCHOTTKY BARRIER RECTIFIER
REVERSE VOLTAGE – 32 Volts
FORWARD CURRENT – 30 Amperes
FEATURES
Metal of silicon rectifier, majority carrier conduction
Guard ring for transient protection
Low power loss, high efficiency
Very low forward voltage drop
High surge capability
Plastic package has UL flammability classification
94V-0
For use in low voltage, high frequency inverters, free
wheeling, and polarity protection applications
MECHANICAL DATA
Case : TO-220AB mold plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf-cm)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
PARAMETER
SYMBOL
SBL30L30CTW
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
32
V
Maximum RMS Voltage
VRMS
22.4
V
Maximum DC Blocking Voltage
VDC
32
Average Rectified Output Current
@TC=120°C
I(AV)
30
A
Peak Forward Surge Current 8.3ms single
half sine-wave
@Tj=25°C
IFSM
220
A
Maximum Forward Voltage (Note 1)
IF=30A@Tj=25°C
IF=15A@Tj=125°C
IF=30A@Tj=125°C
VF
0.57
0.38
0.50
V
Maximum DC Reverse Current at
Rated DC Blocking Voltage
Tj=25°C
Tj=125°C
IR
1.5
350
mA
Typical Junction Capacitance per element (Note 2)
CJ
1650
PF
Typical Thermal rESISTANCE (Note 3)
Per diode
Per device
RΘJC
1.5
0.8
°C/W
Operating junction temperature range
TJ
-55 to +150
°C
Storage temperature range
TSTG
-55 to +150
°C
Notes :
REV. 0, Aug-2009, KTHC80
(1)
300us Pulse Width, 2% Duty Cycle.
(2)
Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
(3)
Thermal Resistance Junction to Case. Device mounted on 200 x 200 x 5 mm Aluminium plate.
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