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参数资料
| 型号： | SBL30V100CT |
| 厂商： | LITE-ON SEMICONDUCTOR CORP |
| 元件分类： | 整流器 |
| 英文描述： | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 2/2页 |
| 文件大小： | 136K |
| 代理商： | SBL30V100CT |
RATING AND CHARACTERISTIC CURVES
SBL30V100CT
FIG.1- FORWARD CURRENT DERATING CURVE
0
5
10
15
20
25
30
35
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, ( C)
A
V
E
R
A
G
E
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.2- MAXIMUM NON-REPETITIVE SURGE CURRENT
0
50
100
150
200
250
300
1
10
100
NUMBER O F CYCLES AT 60Hz
P
E
A
K
F
O
R
W
A
R
D
S
U
R
G
E
C
U
R
E
N
T
,
(A
)
FIG.3- TYPICAL REVE RSE CHARACTERISTICS
0.001
0.01
0.1
1
10
0
20
40
60
80
100
120
PERCENT O F RATE D PEAK REVERSE VOLTA GE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
R
E
V
E
R
S
E
C
U
R
E
N
T
,
(m
A
)
FIG.4- TYPICAL FORWARD CHARACTERISTICS
0.01
0.1
1
10
100
0.01
0.11
0.21
0.31
0.41
0.51
0.61
0.71
0.81
0.91
INSTANTANEOUS FORWARD VOLTAGE, (V)
IN
S
T
A
N
T
A
N
E
O
U
S
F
O
R
W
A
R
D
C
U
R
E
N
T
,
(A
)
FIG.5- TYPICAL JUNCTION CAPACITANCE
100
1000
1
10
100
REVERS E VOLTAGE, (V)
C
A
P
A
C
IT
A
N
C
E
,
(p
F
)
Note: LSC and its subsidiaries reserve the right to make modifications, enhancements, improvements,
corrections or other changes, to this document, and the products and services described herein at anytime,
without notice.
O
Rthj-c=7.6°C/W
Tj=25°C
8.3ms Single Half Sine-Wave
Rthj-c=1.7°C/W
Tj=125°C
Tj=25°C, f=1MHz
Tj=125°C
PULSE WIDTH 300us,
2% Duty Cycle
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