参数资料
型号: SBL4040PT-E3/45
厂商: Vishay General Semiconductor
文件页数: 1/4页
文件大小: 359K
描述: DIODE SCHOTTKY 40V 40A TO-247AD
标准包装: 750
电压 - 在 If 时为正向 (Vf)(最大): 580mV @ 20A
电流 - 在 Vr 时反向漏电: 10mA @ 40V
电流 - 平均整流 (Io)(每个二极管): 40A
电压 - (Vr)(最大): 40V
二极管类型: 肖特基
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-3P-3,SC-65-3
供应商设备封装: TO-3P
包装: 管件
SBL4030PT & SBL4040PT
Vishay General Semiconductor
Document Number: 88733
Revision: 25-Mar-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
? Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters or polarity protection application.
MECHANICAL DATA
Case:
TO-247AD (TO-3P)
Epoxy meets UL 94V-0
flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
40 A
VRRM
30 V, 40 V
IFSM
400 A
VF
0.50 V
TJ max. 125 °C
PIN 1
PIN 3
CASE
PIN 2
TO-247AD (TO-3P)
1
2
3
Note:
(1) 2.0 μs pulse width, f = 1.0 kHz
MAXIMUM RATINGS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL SBL4030PT SBL4040PT UNIT
Maximum repetitive peak reverse voltage VRRM
30 40 V
Maximum working peak reverse voltage VRWM
21 28 V
Maximum DC blocking voltage VDC
30 40 V
Maximum average forward rectified current at TC
= 100 °C I
F(AV)
40 A
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load per diode
IFSM
400 A
Peak repetitive reverse surge current per diode (1)
IRRM
2.0 A
Voltage rate of change at (rated VR) dV/dt 1000 V/μs
Operating junction storage temperature range TJ, TSTG
- 40 to + 125 °C
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