参数资料
型号: SBLB1030CT-HE3/45
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 5 A, 30 V, SILICON, RECTIFIER DIODE, TO-263AB
封装: ROHS COMPLIANT, PLASTIC PACKAGE-3
文件页数: 1/5页
文件大小: 141K
代理商: SBLB1030CT-HE3/45
SBL(F,B)1030CT & SBL(F,B)1040CT
Vishay General Semiconductor
Document Number: 88726
Revision: 25-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
Dual Common-Cathode Schottky Rectifier
FEATURES
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
Solder dip 260 °C, 40 s (for TO-220AB and
ITO-220AB package)
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in low voltage, high frequency rectifier of
switching mode power supplies, freewheeling diodes,
dc-to-dc converters and polarity protection application.
MECHANICAL DATA
Case: TO-220AB, ITO-220AB, TO-263AB
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test, HE3 suffix for high reliability grade
(AEC Q101 qualified), meets JESD 201 class 2
whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
5 A x 2
VRRM
30 V, 40 V
IFSM
175 A
VF
0.55 V
TJ max.
125 °C
TO-263AB
CASE
PIN 2
PIN 1
PIN 3
TO-220AB
SBL10xxCT
ITO-220AB
SBLB10xxCT
PIN 1
K
PIN 2
HEATSINK
1
2
3
1
2
K
SBLF10xxCT
PIN 2
PIN 1
PIN 3
1
2
3
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SBL1030CT
SBL1040CT
UNIT
Maximum repetitive peak reverse voltage
VRRM
30
40
V
Working peak reverse voltage
VRWM
21
28
V
Maximum DC blocking voltage
VDC
30
40
V
Maximum average forward rectified current at TC = 107 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode
IFSM
175
A
Operating junction and storage temperature range
TJ, TSTG
- 40 to + 125
°C
Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min
VAC
1500
V
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