参数资料
型号: SBM1040-13
厂商: DIODES INC
元件分类: 整流器
英文描述: 10 A, 40 V, SILICON, RECTIFIER DIODE
封装: PLASTIC, POWERMITE-3
文件页数: 2/3页
文件大小: 91K
代理商: SBM1040-13
DS30255 Rev. 11 - 3
2 of 3
SBM1040
www.diodes.com
0
100
200
300
400
600
500
I
,
INST
ANT
A
NE
O
US
F
O
R
W
ARD
C
URRENT
(A)
F
V , INSTANTANEOUS FORWARD VOLTAGE (mV)
F
Fig. 1 Typical Forward Characteristics
10
1
0.1
0.01
100
T = +25
°C
A
T = +75
°C
A
T = +150
°C
A
0
5
10
15
20
25
30
40
35
I
,
INST
ANT
A
NE
O
US
REVERSE
CURRENT
(m
A)
R
V , INSTANTANEOUS REVERSE VOLTAGE (V)
R
Fig. 2 Typical Reverse Characteristics
T = +25C
A
T = +150C
A
T = +100C
A
T = +75C
A
100
10
1
0.1
0.01
1000
100
1000
10,000
015
10
25
30
35
20
40
C,
T
O
T
A
L
C
AP
ACIT
ANCE
(pF)
T
V , REVERSE VOLTAGE (V)
R
Fig. 3 Typical Total Capacitance vs. Reverse Voltage
5
f = 1MHz
0
2.5
5.0
7.5
12.5
10.0
0
25
50
75
100
125
150
I
,
DC
FOR
W
A
RD
CURRENT
(A)
F
T , AMBIENT TEMPERATURE (°C)
A
Fig. 4 DC Forward Current Derating
Note 3
Note 4
Note 5
Notes:
3. TA = TSOLDERING POINT, RqJS = 2.5°C/W, RqSA = 0°C/W.
4.
Device mounted on GETEK substrate, 2”x2”, 2 oz. copper, double-sided, cathode pad dimensions 0.75” x 1.0”, anode pad
dimensions 0.25” x 1.0”. RqJA in range of 15-30°C/W.
5.
Device mounted on FR-4 substrate, 2”x2”, 2 oz. copper, single-sided, pad layout as per Diodes Inc. suggested pad layout
document AP02001 which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. RqJA in range of 60-75°C/W.
NOT RECOMMENDED FOR NEW DESIGNS
USE PDS1040
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