参数资料
型号: SBR02M30LP-7
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 140K
描述: DIODE SBR 0.2A 30V 2-DFN
产品培训模块: Super Barrier Rectifier (SBR®)
产品目录绘图: DFN1006-2 Series Side
DFN1006-2 Series Bottom
标准包装: 1
系列: SBR®
二极管类型: 超级势垒
电压 - (Vr)(最大): 30V
电流 - 平均整流 (Io): 200mA
电压 - 在 If 时为正向 (Vf)(最大): 610mV @ 200mA
速度: 小信号 =< 200mA(Io),任意速度
电流 - 在 Vr 时反向漏电: 500nA @ 30V
安装类型: 表面贴装
封装/外壳: 2-XFDFN
供应商设备封装: 2-DFN1006(1.0x0.6)
包装: 标准包装
产品目录页面: 1593 (CN2011-ZH PDF)
其它名称: SBR02M30LPDIDKR
SBR02M30LP
0.2A SBR?
SUPER BARRIER RECTIFIER
NEW PRODUCT
SBR is a registered trademark of Diodes Incorporated.
Features
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Ultra Low Leakage Current
?
Excellent High Temperature Stability
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Patented Super Barrier Rectifier Technology
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Soft, Fast Switching Capability
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175oC Operating Junction Temperature
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Lead Free Finish, RoHS Compliant (Note 1)
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“Green” Molding Compound (No Br, Sb)
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Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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Case: DFN1006-2
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Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
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Moisture Sensitivity: Level 1 per J-STD-020D
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Polarity Indicator: Cathode Dot
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Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
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Marking Information: See Page 3
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Ordering Information: See Page 3
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Weight: 0.001 grams (Approximate)
Top View
Bottom View
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30 V
RMS Reverse Voltage
VR(RMS)
21 V
Average Rectified Output Current (See Figure 1)
IO
0.2 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
5.0 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
RθJS
RθJA
18
263
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit
Test Condition
Reverse Breakdown Voltage (Note 4)
V(BR)R
30 -
-
V IR
= 400μA
Forward Voltage Drop
VF
-
0.50
0.42
0.57
0.51
0.54
0.45
0.61
0.54
V
IF
= 0.1A, T
J
= 25oC
IF
= 0.1A, T
J
= 150oC
IF
= 0.2A, T
J
= 25oC
IF
= 0.2A, T
J
= 150oC
Leakage Current (Note 4)
IR
-
0.1
46
0.5
150
μA
VR
= 30V, T
J
= 25oC
VR
= 30V, T
J
= 150oC
Notes: 1. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
2. Theoretical R
θJS
calculated from the top center of the die straight down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://
www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
SBR02M30LP
Document number: DS31061 Rev. 5 - 2
1 of 3
www.diodes.com
March 2008
? Diodes Incorporated
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