参数资料
型号: SBR07U20LPS-7
厂商: Diodes Inc
文件页数: 1/3页
文件大小: 97K
描述: DIODE SBR 0.7A 20V 2-DFN
产品培训模块: Super Barrier Rectifier (SBR®)
产品目录绘图: SBR0(5,7)U20LPS-7 Side
SBR0(5,7)U20LPS-7 Bottom
标准包装: 1
系列: SBR®
二极管类型: 超级势垒
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 700mA
电压 - 在 If 时为正向 (Vf)(最大): 550mV @ 700mA
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 50µA @ 20V
安装类型: 表面贴装
封装/外壳: 2-XFDFN
供应商设备封装: 2-DFN1006(1.0x0.6)
包装: 标准包装
产品目录页面: 1593 (CN2011-ZH PDF)
其它名称: SBR07U20LPSDIDKR
SBR07U20LPS
0.7A SBR?
SURFACE MOUNT SUPER BARRIER RECTIFIER
SBR07U20LPS
Document number: DS31358 Rev. 2 - 2
1 of 3
www.diodes.com
January 2008
? Diodes Incorporated
NEW PRODUCT
SBR is a registered trademark of Diodes Incorporated.
Features
?
Ultra Low Forward Voltage Drop
?
Superior Reverse Avalanche Capability
?
Patented Super Barrier Rectifier Technology
?
Soft, Fast Switching Capability
?
150oC Operating Junction Temperature
?
Lead Free by
Design, RoHS Compliant (Note 1)
?
“Green” Device (Note 2)
Mechanical Data
?
Case: DFN1006H4-2
?
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminal Connections: Cathode Dot
?
Terminals: Finish - NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
?
Marking Information: See Page 2
?
Ordering Information: See Page 2
?
Weight: 0.001 grams (approximate)
Bottom View
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
20
V
RMS Reverse Voltage
VR(RMS)
14
V
Average Rectified Output Current (See Figure 1)
IO
700
mA
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
7 A
Thermal Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Value Unit
Maximum Thermal Resistance (Note 3)
RθJA
224 oC/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit
Test Condition
Reverse Breakdown Voltage (Note 4)
V(BR)R
20 -
-
V IR
= 50μA
Forward Voltage Drop
VF
-
0.34
0.46
0.51
0.48
0.38
0.50
0.55
0.51
V
IF
= 0.1A, T
j
= 25oC
IF
= 0.5A, T
j
= 25oC
IF
= 0.7A, T
j
= 25oC
IF
= 0.7A, T
j
= 125oC
Leakage Current (Note 4)
IR
-
6
1.5
50
5
μA
mA
VR
= 20V, T
j
= 25oC
VR
= 20V, T
j
= 150oC
Notes: 1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy
can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 substrate. 2” x
2” 2oz. Copper, single sided PCB board.
4. Short duration pulse test used to minimize self-heating effect.
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