参数资料
型号: SBR10100CT
厂商: Diodes Inc
文件页数: 2/5页
文件大小: 165K
描述: DIODE SBR 10A 100V TO220-3
产品培训模块: Super Barrier Rectifier (SBR®)
特色产品: Super Barrier Rectifiers
标准包装: 50
系列: SBR®
电压 - 在 If 时为正向 (Vf)(最大): 800mV @ 5A
电流 - 在 Vr 时反向漏电: 100µA @ 100V
电流 - 平均整流 (Io)(每个二极管): 10A
电压 - (Vr)(最大): 100V
二极管类型: 超级势垒
速度: 快速恢复 =< 500 ns,> 200mA(Io)
二极管配置: 1 对共阴极
安装类型: 通孔
封装/外壳: TO-220-3
供应商设备封装: TO-220AB
包装: 管件
其它名称: SBR10100CTDI
SBR is a registered trademark of Diodes Incorporated.
SBR10100
Document number: DS30961 Rev. 11- 2
2 of 5
www.diodes.com
June 2012
? Diodes Incorporated
SBR10100CT
SBR10100CTFP
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
100 V
Average Rectified Output Current @ TC
= 115oC
IO
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
120 A
Peak Repetitive Reverse Surge Current (2μS-1kHz)
IRRM
2 A
Isolation Voltage (ITO-220AB Only)
From Terminal to Heatsink t = 3sec
VAC
2000 V
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance (per leg)
Package = TO-220AB
Package = ITO-220AB
RθJC
2
4
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
VF
-
-
-
0.80
0.71
V
IF
= 5A, T
J
= 25oC
IF
= 5A, T
J
= 125oC
Leakage Current (Note 6)
IR
- - 100 15
μA
mA
VR
= 100V, T
J
= 25oC
VR
= 100V, T
J
= 125oC
Notes: 6. Short duration pulse test used
to minimize self-heating effect.
7. Using heatsink (by Black Aluminum 45mm*20mm*12mm)
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