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参数资料
| 型号： | SBR10100CTI |
| 厂商： | DIODES INC |
| 元件分类： | 整流器 |
| 英文描述： | 10 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA |
| 封装： | PLASTIC, TO-262, 3 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 代理商： | SBR10100CTI |
Major ratings and characteristics
Values
Units
10
A
100
V
0.64
V, typ
-65 to 150
℃
ELECTRICAL:
MECHANICAL:
* Ultra-Low Forward Voltage Drop
* Molded Plastic TO-220AB, TO-262, TO-263, and
* Reliable High Temperature Operation
ITO-220 packages
* Super Barrier Design
* Softest, fast switching capability
* 150
OC Operating Junction Temperature
www.apdsemi.com
Version 1.0 - August 2006
1
SBR10100CTB
Using state-of-the-art SBR IC process technology,
the following features are made possible in a single device:
Case Styles
Device optimized for ultra-low forward
voltage drop to maximize efficiency in
Power Supply applications
SBR10100CT
SBR10100CTF
SBR10100CTI
SBR10100CT
VRRM
SBR10100CTF
SBR10100CTI
Characteristics
IF(AV) Rectangular Waveform
VF@5A, Tj=125℃
Tj(operating/storage)
TO-220AB
ITO-220
TO-262
TO-263
SBR10100CTB
________________________________________________________________________________________________
1
3
2
Anode
Common
Cathode
Anode
1
3
2
Anode
Common
Cathode
Anode
1
3
2
Anode
Common
Cathode
Anode
1
3
2
Anode
Common
Cathode
Anode
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| SBR1630 | 16 A, 30 V, SILICON, RECTIFIER DIODE, TO-220 |
| SBR20150CT-G | 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBR20M100CTI | 20 A, 100 V, SILICON, RECTIFIER DIODE, TO-262AA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR10100CTL | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SUPER BARRIER RECTIFIER |
| SBR10100CTL-13 | 功能描述:MOSFET Super Barrier Rectif TO252 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SBR10100F | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:VOLTAGE 100 V 10.0 Amp Schottky Barrier Rectifiers |
| SBR10120CTL | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:SUPER BARRIER RECTIFIER |
| SBR10120CTL-13 | 功能描述:MOSFET Super Barrier Rectif TO252 T&R 2.5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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