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| 型号： | SBR1045D1-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 81K |
| 描述： | DIODE SBR 10A 45V DPAK |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 45V |
| 电流 - 平均整流 (Io)： | 10A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 580mV @ 10A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 45V |
| 电容@ Vr, F： | 400pF @ 5V，1MHz |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | D-Pak |
| 包装： | 标准包装 |
| 其它名称： | SBR1045D1-13DIDKR |
SBR1045D1
Document number: DS31374 Rev. 7 - 2
2 of 5
www.diodes.com
June 2011
? Diodes Incorporated
SBR1045D1
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
45 V
RMS Reverse Voltage
VR(RMS)
32 V
Average Rectified Output Current @ TC
= 140oC
IO
10 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
90 A
Repetitive Peak Avalanche Power (1μs, 25oC)
PARM
5000 W
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Case (Note 3)
RθJA
RθJC
29
3
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 4)
V(BR)R
45 - - V IR
= 0.45mA
Forward Voltage Drop (per leg)
VF
-
-
-
-
0.42
0.37
-
0.50
0.48
0.41
0.58
0.56
V
IF
= 5A, T
J
= 25oC
IF
= 5A, T
J
= 125oC
IF
= 10A, T
J
= 25oC
IF
= 10A, T
J
= 125oC
Leakage Current (Note 4)
IR
-
-
50
12
500
40
μA
mA
VR
= 45V, T
J
= 25oC
VR
= 45V, T
J
= 125oC
Total Capacitance
CT
- 400 - pF VR
= 5V, f = 1MHz
TJ
= 25oC
Notes: 3. Device mounted on polymide substrate, 240mm2
Copper pad, double-sided PC Board.
4. Short duration pulse test used to minimize self-heating effect.
5. Device mounted on polymide substrate, 2” * 2” Copper pad,
double-sided PC Board with minimum recommended pad layout.
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相关代理商/技术参数 |
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| SBR1045D1Q-13 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:10A SBR SUPER BARRIER RECTIFIER |
| SBR1045SD1-T | 功能描述:整流器 10A SBR 45V VRRM 32V Vr 10A 180 IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SBR1045SP5 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:10A SBR? SUPER BARRIER RECTIFIER PowerDI?5 |
| SBR1045SP5-13 | 功能描述:肖特基二极管与整流器 10A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR1050 | 制造商:DAESAN 制造商全称:Daesan Electronics Corp. 功能描述:CURRENT 10.0Amperes VOLTAGE 20 to 60 Volts |
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