参数资料
型号: SBR10U200CTF
厂商: DIODES INC
元件分类: 参考电压二极管
英文描述: 10 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AB
封装: ROHS COMPLIANT, PLASTIC, ITO-220AB, 3 PIN
文件页数: 1/4页
文件大小: 210K
代理商: SBR10U200CTF
SBR10U200CT
SBR10U200CTF
SBR10U200CTB
10A SBR
Super Barrier Rectifier
Features
Mechanical Data
Case Material: Molded Plastic, UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Matte Tin Finish annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
Marking: See Page 4
Ordering Information: See Page 4
Low Forward Voltage Drop
Excellent High Temperature Stability
Super Barrier Design
Soft, Fast Switching Capability
Molded Plastic TO-220AB, D
2Pak,
and ITO-220AB Packages
Lead Free Finish, RoHS Compliant (Note 2)
Maximum Ratings @ TA = 25C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
200
V
RMS Reverse Voltage
VR(RMS)
141
V
Average Rectified Output Current @TC = 140C
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
150
A
Peak Repetitive Reverse Surge Current (2uS-1Khz)
IRRM
3
A
Maximum Thermal Resistance (per leg)
Package = TO-220AB & D
2
Pak
Package = ITO-220AB
RJC
2
4
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
C
Electrical Characteristics @ TA = 25C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V(BR)R
200
-
V
IR = 0.2 mA
Forward Voltage Drop
VF
-
0.60
-
0.82
0.65
0.88
V
IF = 5A, TJ = 25C
IF = 5A,TJ = 125C
IF = 10A, TJ = 25C
Leakage Current (Note 1)
IR
-
0.2
25
mA
VR = 200V, TJ = 25 C
VR = 200V, TJ = 125 C
Notes:
1.
Short duration pulse test used to minimize self-heating effect.
2.
RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
__________
SBR is a registered trademark of Diodes Incorporated.
SBR10U200 Rev. 1
1 of 4
December 2006
Diodes Incorporated
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