参数资料
型号: SBR10U45SD1
厂商: DIODES INC
元件分类: 参考电压二极管
英文描述: 45 V, SILICON, RECTIFIER DIODE, DO-201AD
封装: ROHS COMPLIANT, PLASTIC PACKAGE-2
文件页数: 1/3页
文件大小: 101K
代理商: SBR10U45SD1
SBR10U45SD1
10A SBR
SUPER BARRIER RECTIFIER
SBR10U45SD1
Document number: DS31350 Rev. 2 - 2
1 of 3
www.diodes.com
March 2008
Diodes Incorporated
NEW
PRODUCT
SBR is a re
Features
Designed as Bypass Diodes for Solar Panels
Selectively Rated for 200C Maximum Junction Temperature
for High Thermal Reliability
Patented Super Barrier Rectifier Technology
High Forward Surge Capability
Ultra Low Forward Voltage Drop
Excellent High Temperature Stability
Lead Free Finish, RoHS Compliant (Note 2)
Mechanical Data
Case: DO-201AD
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish – Tin Plated Leads. Solderable per MIL-STD-
202, Method 208
Marking Information: See Page 2
Ordering Information: See Page 2
Weight: TBD grams (approximate)
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
45
V
RMS Reverse Voltage
VR(RMS)
32
V
Average Rectified Output Current
IO
10
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
200
A
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 3)
RθJA
54
C/W
VR ≤ 80% VRRM
-65 to +150
VR ≤ 50% VRRM
≤180
Operating Temperature Range
DC Forward Mode
TJ
≤200
C
Storage Temperature Range
TSTG
-65 to +175
C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 1)
V(BR)R
45
-
V
IR = 0.5mA
Forward Voltage Drop
VF
-
0.42
0.37
0.42
0.47
0.41
V
IF = 8A, TJ = 25C
IF = 10A, TJ = 25C
IF = 10A, TJ = 125C
Leakage Current (Note 1)
IR
-
0.051
-
27
0.3
15
75
mA
VR = 45V, TJ = 25C
VR = 45V, TJ = 100C
VR = 45V, TJ = 150C
Notes:
1. Short duration pulse test used to minimize self-heating effect.
2. RoHS revision 13.2.2003. High temperature solder exemption applied, see EU Directive Annex Note 7.
3. FR-4 PCB, 2oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
gistered trademark of Diodes Incorporated
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