- 您现在的位置：买卖IC网 > Datasheet目录145 > SBR130S3-7 (Diodes Inc)DIODE SBR 1A 30V SOD-323 Datasheet资料下载
参数资料
| 型号： | SBR130S3-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 99K |
| 描述： | DIODE SBR 1A 30V SOD-323 |
| 产品培训模块： | Super Barrier Rectifier (SBR®) |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 1A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 460mV @ 1A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 50µA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 标准包装 |
| 产品目录页面： | 1593 (CN2011-ZH PDF) |
| 其它名称： | SBR130S3-7DIDKR |
SBR is a registered trademark of Diodes Incorporated.
SBR130S3
Document number: DS31099 Rev. 6 - 2
2 of 4
www.diodes.com
April 2012
? Diodes Incorporated
SBR130S3
NEW PRODUCT
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30 V
RMS Reverse Voltage
VR(RMS)
21 V
Average Rectified Output Current TC
= 65°C
IO
1 A
Non-Repetitive Peak Forward Surge Current
8.3ms Single Half Sine-Wave Superimposed on Rated Load
IFSM
20 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 5)
RθJA
488 oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
30 - - V IR
= 200μA
Forward Voltage Drop
VF
- 0.39 0.43
- 0.31 0.34
- 0.42 0.46 V
IF
= 700mA, T
J
= 25oC
IF
= 700mA, T
J
= 150oC
IF
= 1A, T
J
= 25oC
- 0.36 0.39
IF
= 1A, T
J
= 150oC
Leakage Current (Note 6)
IR
- 8.0 20 μA VR
= 10V, T
J
= 25oC
- 4.0 10 mA VR
= 10V, T
J
= 150oC
- 12 50 μA VR
= 30V, T
J
= 25oC
- 5 15 mA VR
= 30V, T
J
= 150oC
Notes: 5. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com.
6. Short duration pulse test used to minimize self-heating effect.
T = -55°CA
T = 25°CA
T = 75°CA
T = 125°CA
T = 150°CA
T = -55°CA
T = 25°CA
T = 75°CA
T = 125°CA
T = 150°CA
相关PDF资料 |
PDF描述 |
|---|---|
| SBR130SV-7 | DIODE SBR 30V 1A SOT563 |
| SBR140S3-7 | DIODE SBR 1A 40V SOD-323 |
| SBR160S23-7 | DIODE SBR 60V 900MA SOT23 |
| SBR1A40S1-7 | DIODE SBR 40V 1A SOD123 |
| SBR1A40S3-7 | DIODE SBR 40V 1A SOD323 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR130SV-7 | 功能描述:肖特基二极管与整流器 Super Barrier Rect SOT563,3K RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR136CT1LF | 制造商:ON Semiconductor 功能描述: |
| SBR139 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SBR140LP-7 | 功能描述:MOSFET Super Barrier Rectif X1-DFN1411-3 T&R 5K RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| SBR140S3 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:Super Barrier Rectifier |
发布紧急采购，3分钟左右您将得到回复。