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参数资料
型号： SBR1645-T254
厂商： SEMELAB LTD
元件分类： 参考电压二极管
英文描述： DUAL SCHOTTKY BARRIER RECTIFIER IN A TO254 HERMETICALLY SEALED PACKAGE FOR HI-REL APPLICATIONS
中文描述： 16 A, 45 V, SILICON, RECTIFIER DIODE, TO-254AA
封装： TO-254, 3 PIN
文件页数： 1/1页
文件大小： 13K
代理商： SBR1645-T254
V
RRM
V
RWM
I
F(AV)
I
FRM
T
FSM
I
RRM
R
q
JC
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
Average rectified Forward Current (T
C
= 125°C)
Peak Repetitive Forward Current (T
C
= 125°C)
Nonrepetitive Peak Surge Current
Peak Repetitive Reverse Surge Current
Thermal Resistance, Junction to Case
16A
32A
150A
10A
2
°C/W
SBR1645-T254
LA B
MECHANICAL DATA
Dimensions in mm
S E M E
Prelim. 2/98
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk
45V
45V
1
2
3
13.59 (0.535)
13.84 (0.545)
3.53 (0.139)
6.32 (0.249)
6.60 (0.260)
1.02 (0.040)
1.27 (0.050)
3
3
1
1
1
1
2
2
3.81 (0.150)
BSC
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
DUAL SCHOTTKY
BARRIER RECTIFIER
IN A TO254
HERMETICALLY
SEALED PACKAGE
FOR HI–REL APPLICATIONS
FEATURES
HERMETIC TO254 METAL PACKAGE
ISOLATED CASE
16A, 45V
COMMON CATHODE
MILITARY OPTIONS AVAILABLE
TO–254METAL PACKAGE
Pin 1
–
Anode 1
Pin 2
–
Cathode
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
MBR1645
Pin 3
–
Anode 2
Parameter
Test Conditions
T
C
= 125
°
C
T
C
= 25
°
C
V
R
= V
RRM
V
R
= V
RRM
Min.
Typ.
Max.
0.57
0.63
40
0.2
Unit
V
F
Forward Voltage
(1)
I
R
Reverse Current
I
F
= 16A
I
F
= 16A
T
C
= 125
°
C
T
C
= 25
°
C
V
mA
ELECTRICAL CHARACTERISTICS
(Per Diode)
(1
)Pulse Test: Pulse Width = 300
m
s. Duty Cycle
￡ 2.0%
相关PDF资料
PDF描述
SBR1645-T254 Dual Schottky Barrier Diode In TO254 Hermetically Sealed Package For HI-REL Application(Common Cathode)(双肖特基势垒二极管(HI-REL应用,TO254气密封装,共阴极连接))
SBT1020_07 Schottky Barrier Rectifiers - Single Diode
SC12 SILICON CONTROLLED RECTIFIERS
SC12-600-100 SILICON CONTROLLED RECTIFIERS
SC12-800-100 SILICON CONTROLLED RECTIFIERS
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