参数资料
型号: SBR1U200P1-7
厂商: Diodes Inc
文件页数: 1/4页
文件大小: 70K
描述: DIODE SBR 200V 1A POWERDI123
产品培训模块: Super Barrier Rectifier (SBR®)
标准包装: 1
系列: SBR®
二极管类型: 超级势垒
电压 - (Vr)(最大): 200V
电流 - 平均整流 (Io): 1A
电压 - 在 If 时为正向 (Vf)(最大): 820mV @ 1A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
反向恢复时间(trr): 25ns
电流 - 在 Vr 时反向漏电: 50µA @ 200V
安装类型: 表面贴装
封装/外壳: 2-SMD,扁平引线
供应商设备封装: PowerDI? 123
包装: 标准包装
其它名称: SBR1U200P1-7DIDKR
SBR1U200P1
Document number: DS32093 Rev. 2 - 2
1 of 4
www.diodes.com
August 2010
? Diodes Incorporated
SBR1U200P1
SBR and PowerDI are registered trademarks of Diodes Incorporated.
NEW PRODUCT
1.0A SBR?
SURFACE MOUNT SUPER BARRIER RECTIFIER ?
123
PowerDI
Features
?
Ultra Low Forward Voltage Drop
?
Low Leakage Current
?
Superior Reverse Avalanche Capability
?
Excellent High Temperature Stability
?
Patented Interlocking Clip Design for High Surge Current
Capacity
?
Patented Super Barrier Rectifier Technology
?
Soft, Fast Switching Capability
?
150oC Operating Junction Temperature
?
Lead Free Finish, RoHS Compliant (Note 1)
?
“Green” Molding Compound (No Br, Sb)
Mechanical Data
?
Case: PowerDI
?123
?
Case Material: Molded Plasti
c, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020
?
Polarity Indicator: Cathode Band
?
Terminals: Finish - Matte Ti
n annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
?
Marking Information: See Page 3
?
Ordering Information: See Page 3
?
Weight: 0.018 grams (approximate)
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
200 V
Average Rectified Output Current (See Figure 1)
IO
1.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
40 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance Junction to Ambient (Note 2)
RθJA
217
oC/W
Maximum Thermal Resistance Junction to Ambient (Note 3)
RθJA
138 oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage
VF
-
-
0.75
0.60
0.82
0.68
V
IF
= 1.0A, T
J
= 25oC
IF
= 1.0A, T
J
= 125oC
Reverse Current (Note 4)
IR
- - 50 μA
VR
= 200V, T
J
= 25oC
Reverse Recovery Time
trr
- - 25 ns IF
= 0.5A, I
R
= 1A,
IRR
= 0.25A,
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied, see EU Directive 2002/95/EC Annex Notes.
2. FR-4 PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
3. Polymide PCB, 2 oz. Copper, minimum recommended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
4. Short duration pulse test used to minimize self-heating effect.
Top View
相关PDF资料
PDF描述
SBR1U30SV-7 DIODE SBR 30V 1A SOT-563
SBR1U400P1-7 DIODE SBR 400V 1A POWERDI123
SBR1U40LP-7 DIODE SBR 1.0A 40V 3-DFN
SBR2A30P1-7 DIODE SBR 2A 30V POWERDI123
SBR2A40P1-7 DIODE SBR 2A 40V POWERDI123
相关代理商/技术参数
参数描述
SBR1U30SV-7 功能描述:肖特基二极管与整流器 Super Barrier Rect SOT563,3K RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SBR1U400P1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SBR SURFACE MOUNT SUPER BARRIER RECTIFIER PowerDI 123
SBR1U400P1-7 功能描述:肖特基二极管与整流器 SBRULTRA LOW VF 1A400V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
SBR1U40LP 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SBR? SUPER BARRIER RECTIFIER
SBR1U40LP_1 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:1.0A SBR? SUPER BARRIER RECTIFIER