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| 型号： | SBR20U100CT |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 346K |
| 描述： | DIODE SBR 20A 100V TO220-3 |
| 标准包装： | 50 |
| 系列： | SBR® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 700mV @ 10A |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 100V |
| 电流 - 平均整流 (Io)（每个二极管）： | 10A |
| 电压 - (Vr)（最大）： | 100V |
| 二极管类型： | 超级势垒 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
SBR is a registered trademark of Diodes Incorporated.
SBR20U100
Document number: DS30978 Rev. 10 - 2
2 of 5
www.diodes.com
April 2014
? Diodes Incorporated
SBR20U100CT
SBR20U100CTB
SBR20U100CTFP
Maximum Ratings (Per Leg)
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
100 V
Average Rectified Output Current (Per Leg)
(Total)
IO
10
20
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
200 A
Peak Repetitive Reverse Surge Current (2μS - 1Khz)
IRRM
3 A
Non-Repetitive Avalanche Energy (TJ
= +25°C, I
AS
= 5A, L = 8.5mH) E
AS
140 mJ
Repetitive Peak Avalanche Power (1μs, +25°C)
PARM
13,200 W
Isolation Voltage (ITO-220AB Only)
From terminal to heatsink t = 3 sec.
VAC
2000 V
Thermal Characteristics (Per Leg)
Characteristic Symbol Value Unit
Typical Thermal Resistance
Package = TO-220AB
Package = ITO-220AB
Package = TO263 (D2Pak)
R?JC
2
4
2
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175 °C
Electrical Characteristics (Per Leg) (@T
A
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
VF
—
—
0.57
—
0.70
0.63
0.82
V
IF
= 10A, T
J
= +25°C
IF
= 10A, T
J
= +125°C
IF
= 20A, T
J
= +25°C
Leakage Current (Note 6)
IR
— — 0.5 25
mA
VR
= 100V, T
J
= +25°C
VR
= 100V, T
J
= +125°C
Notes: 6. Short duration pulse test used
to minimize self-heating effect.
7. Using heatsink (by Black Aluminurn 45mm*20mm*12mm)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR20U100CTE | 功能描述:整流器 SUPER BARRIER RECT 20A 100V ULTRA LO VF RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SBR20U100CTE-G | 制造商:Diodes Incorporated 功能描述:SUPER BARRIER RECTIFIER TO-220AB 20A 100V ULTRALOW VF ROHS T - Rail/Tube |
| SBR20U100CTFP | 功能描述:肖特基二极管与整流器 20A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR20U100CTFP-G | 制造商:Diodes Incorporated 功能描述:20A SBR SUPER BARRIER RECTIFIER |
| SBR20U150CT | 功能描述:肖特基二极管与整流器 20A 150V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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