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| 型号： | SBR2A40SA-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/4页 |
| 文件大小： | 94K |
| 描述： | DIODE SBR 40V 2A SMA |
| 产品培训模块： | Super Barrier Rectifier (SBR®) |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 40V |
| 电流 - 平均整流 (Io)： | 2A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 550mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 500µA @ 40V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 标准包装 |
| 产品目录页面： | 1593 (CN2011-ZH PDF) |
| 其它名称： | SBR2A40SA-13DIDKR |
SBR2A40SA
Document number: DS31769 Rev. 4 - 2
2 of 4
www.diodes.com
December 2010
? Diodes Incorporated
SBR2A40SA
SBR is a registered trademark of Diodes Incorporated.
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
40 V
Average Rectified Output Current (See Figure 1)
IO
2 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
15 A
Thermal Characteristics
Characteristic Symbol Value Unit
Typical Thermal Resistance Junction to Ambient (Note 4)
RθJA
110 oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Forward Voltage Drop
VF
-
-
-
0.55
0.50
V
IF
= 2.0A, T
J
= 25oC
IF
= 1.0A, T
J
= 25oC
Leakage Current (Note 5)
IR
-
-
-
500
100
μA
mA
VR
= 40V, T
J
= 25oC
VR
= 40V, T
J
= 125oC
Notes: 4. Device mounted on Polymide substrate, with 1” x 1”, 2 oz. Copper, double-sided PCB board.
5. Short duration pulse test used to minimize self-heating effect.
0
0.2
0.4
0.6
0.8
1.0
1.2
0 0.5 1 1.5 2 2.5
Fig. 1 Forward Power Dissipation
I , AVERAGE FORWARD CURRENT (A)F(AV)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
0 100 200 300 400 500
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
0.0001
0.001
0.01
0.1
1
10
I, I
N
S
T
A
N
T
A
N
E
O
U
S
F
O
R
WA
R
D
C
U
R
R
E
N
T
(A)
F
T = 25°CA
T = 85°CA
T = 125°CA
T = 150°CA
相关PDF资料 |
PDF描述 |
|---|---|
| SBR2M30P1-7 | RECTIFIER SBR 2A 30V POWERDI123 |
| SBR2U150SA-13 | DIODE SBR 150V 2A SMA |
| SBR2U30P1-7 | RECTIFIER SBR 2A 30V POWERDI123 |
| SBR2U30SA-13 | DIODE SBR 2A 30V SMA |
| SBR3A40SA-13 | DIODE SBR 3A 40V SMA |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR2A40SA-13-F | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2.0A SBR SUPER BARRIER RECTIFIER SMA |
| SBR2F | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:FAST RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS |
| SBR2M30P1 | 制造商:DIODES 制造商全称:Diodes Incorporated 功能描述:2.0A SBR Surface Mount Super Barrier Rectifier |
| SBR2M30P1-7 | 功能描述:整流器 2A 30V Ultralow IR RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SBR2U150SA-13 | 功能描述:肖特基二极管与整流器 Super Barrier Rect SMA,5K RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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