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| 型号： | SBR2U150SA-13 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 216K |
| 描述： | DIODE SBR 150V 2A SMA |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 150V |
| 电流 - 平均整流 (Io)： | 2A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 800mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 75µA @ 150V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | DO-214AC，SMA |
| 供应商设备封装： | SMA |
| 包装： | 标准包装 |
| 其它名称： | SBR2U150SA-13DIDKR |
SBR2U150SA
Document number: DS31875 Rev. 6 - 2
2 of 5
www.diodes.com
May 2013
? Diodes Incorporated
SBR2U150SA
SBR is a registered trademark of Diodes Incorporated
Maximum Ratings
(@TA
= +25°C, unless otherwise specified.)
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
150 V
Average Rectified Output Current (See Figure 1)
IO
2.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
42 A
Maximum Voltage Rate of Change (Rated VR)
dv/dt 10,000 V/μs
Thermal Characteristics
Characteristic Symbol Value Unit
Thermal Resistance Junction to Soldering (Note 4)
RθJS
3
°C/W
Thermal Resistance Junction to Ambient (Note 5)
RθJA
119
Thermal Resistance Junction to Ambient (Note 6)
RθJA
88
Operating and Storage Temperature Range
TJ, TSTG
-65 to +175 °C
Electrical Characteristics
(@TA
= +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 7)
V(BR)R
150 — — V IR
= 100μA
Forward Voltage Drop
VF
— — 0.8
V
IF
= 2.0A, T
J
= +25C
— — 0.65
IF
= 2.0A, T
J
= +125°C
Leakage Current (Note 6)
IR
— — 75 μA VR
= 150V, T
J
= +25°C
— — 10 mA VR
= 150V, T
J
= +125°C
Notes: 4. Theoretical R?JS
calculated from the top center of the die straig
ht down to the PCB cathode tab solder junction.
5. FR-4 PCB, 2 oz. Copper, minimum recomm
ended pad layout per http://www.diodes.com. TA
= 25oC
6. Polymide PCB, 2 oz. Copper, mi
nimum recommended pad layout per http://www.diodes.com
7. Short duration pulse test used to minimize self-heating effect.
Fig. 1 Forward Power Dissipation
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
01 2 34
I , AVERAGE FORWARD CURRENT (A)F(AV)
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (W)
D
Fig. 2 Typical Forward Characteristics
V , INSTANTANEOUS FORWARD VOLTAGE (mV)F
I , INSTANTANEOUS FORWARD CURRENT (A)
F
0.0001
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600 700 800 900
T = 25°CA
T = 125°CA
T = 150°CA
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