- 您现在的位置：买卖IC网 > Datasheet目录145 > SBR2U30P1-7 (Diodes Inc)RECTIFIER SBR 2A 30V POWERDI123 Datasheet资料下载
参数资料
| 型号： | SBR2U30P1-7 |
| 厂商： | Diodes Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 122K |
| 描述： | RECTIFIER SBR 2A 30V POWERDI123 |
| 产品培训模块： | Super Barrier Rectifier (SBR®) |
| 其它图纸： | DFL(R,U,S,), SBR(2,3) Series Side DFL(R,U,S,), SBR(2,3) Series Top DFL(R,U,S,), SBR(2,3) Series Bottom |
| 标准包装： | 1 |
| 系列： | SBR® |
| 二极管类型： | 超级势垒 |
| 电压 - (Vr)（最大）： | 30V |
| 电流 - 平均整流 (Io)： | 2A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 400mV @ 2A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 400µA @ 30V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 2-SMD，扁平引线 |
| 供应商设备封装： | PowerDI? 123 |
| 包装： | 标准包装 |
| 产品目录页面： | 1593 (CN2011-ZH PDF) |
| 其它名称： | SBR2U30P1DIDKR |
SBR2U30P1
Document number: DS30706 Rev. 7 - 2
2 of 5
www.diodes.com
March 2012
? Diodes Incorporated
SBR2U30P1
SBR and POWERDI are registered trademarks of Diodes Incorporated.
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30 V
RMS Reverse Voltage
VR(RMS)
21 V
Average Rectified Output Current (See Figure 1)
IO
2.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
75 A
Non-Repetitive Avalanche Energy
(TJ
= 25°C, I
AS
= 5A, L = 8.5 mH)
EAS
105 mJ
Repetitive Peak Avalanche Energy
(TP
= 1μs, T
J
= 25°C)
PARM
1100 W
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
Thermal Resistance Junction to Ambient (Note 5)
RθJS
RθJA
RθJA
5
178
123
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150 oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 6)
V(BR)R
30 - - V IR
= 400μA
Forward Voltage Drop
VF
- 0.22 0.26
- 0.36 0.40
- 0.12 0.15 V
IF
= 0.1A, T
J
= 25oC
- 0.31 0.35
IF
= 1.0A, T
J
= 25oC
IF
= 2.0A, T
J
= 25oC
IF
= 0.1A, T
J
= 125oC
- 0.27 0.30
IF
= 1.0A, T
J
= 125oC
- 0.30 0.33
IF
= 2.0A, T
J
= 125oC
Leakage Current (Note 6)
IR
- 75 150 μA VR
= 5V, T
J
= 25oC
- 150 400 μA VR
= 30V, T
J
= 25oC
- 6 15 mA VR
= 5V, T
J
= 125oC
- 12 20 mA VR
= 30V, T
J
= 125oC
Notes: 3. Theoretical RθJS
calculated from the top center of the die straig
ht down to the PCB cathode tab solder junction.
4. FR-4 PCB, 2 oz. Copper, minimum recommended pad
layout per http://www.diodes.com/datasheets/ap02001.pdf.
5. Polymide PCB, 2 oz. Copper, minimum reco
mmended pad layout per http://www.diodes.com/datasheets/ap02001.pdf.
6. Short duration pulse test used to minimize self-heating effect.
相关PDF资料 |
PDF描述 |
|---|---|
| SBR2U30SA-13 | DIODE SBR 2A 30V SMA |
| SBR3A40SA-13 | DIODE SBR 3A 40V SMA |
| SBR3M30P1-7 | RECTIFIER SBR 3A 30V POWERDI123 |
| SBR3U100LP-7 | DIODE SBR 3A 100V 8-DFN |
| SBR3U150LP-7 | DIODE SBR 3A 150V 8-DFN |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBR2U30SA-13 | 功能描述:肖特基二极管与整流器 SMA 2.0A RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR30 | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:STANDARD RECOVERY 1-PHASE SILICON BRIDGE RECTIFIERS |
| SBR30016JS | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Schottky Barrier Diode (Twin Type · Cathode Common) 160V, 30A Rectifier |
| SBR30100 | 制造商:SECOS 制造商全称:SeCoS Halbleitertechnologie GmbH 功能描述:VOLTAGE 100 V 30.0 Amp Schottky Barrier Rectifiers |
| SBR30100CT | 功能描述:肖特基二极管与整流器 30A 100V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。