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| 型号： | SBR30U30CT |
| 厂商： | Diodes Inc |
| 文件页数： | 1/3页 |
| 文件大小： | 134K |
| 描述： | RECTIFIER SBR 30A 30V TO220-3 |
| 产品培训模块： | Super Barrier Rectifier (SBR®) |
| 产品目录绘图： | SBR(2,3,4,6)0(A,U) Series Side 1 SBR(2,3,4,6)0(A,U) Series Side 2 |
| 特色产品： | Super Barrier Rectifiers |
| 标准包装： | 50 |
| 系列： | SBR® |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 540mV @ 30A |
| 电流 - 在 Vr 时反向漏电： | 1.5mA @ 30V |
| 电流 - 平均整流 (Io)（每个二极管）： | 30A |
| 电压 - (Vr)（最大）： | 30V |
| 二极管类型： | 超级势垒 |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 二极管配置： | 1 对共阴极 |
| 安装类型： | 通孔 |
| 封装/外壳： | TO-220-3 |
| 供应商设备封装： | TO-220AB |
| 包装： | 管件 |
| 产品目录页面： | 1593 (CN2011-ZH PDF) |
SBR30U30CT
30A SBR30A SBR??
Super Barrier RectifierSuper Barrier Rectifier
Features Mechanical Data
Features Mechanical Data
T
T
?
Ultra Low Forward Voltage Drop
?
Case Material: Molded Plastic, UL Flammability
Classification Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020C
?
Terminals: Matte Tin Finish annealed over
Copper leadframe. Solderable per MIL-STD-202,
Method 208
?
Marking Information: See Page 3
?
Ordering Information: See Page 3
U
CC
?
Excellent High Temperature Stability
SBR30U30 Rev. 4 - 2
1 of 3
www.diodes.com
January 2008
? Diodes Incorporated
N
E
W
PP
R
O
D
DU
?
Superior Reverse Avalanche Capability
?
Patented Super Barrier Rectifier Technology
R
O
?
Soft, Fast Switching Capability
?
150°C Operating Junction Temperature
?
Plastic TO-220AB package
?
Lead Free Finish, RoHS Compliant (Note 3)
Maximum Ratings @ T
A
= 25oC unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
30
V
RMS Reverse Voltage
VR(RMS)
21
V
Average Rectified Output Current @ TC
= 140oC
IO
30
A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
280 A
Non-Repetitive Avalanche Energy
(TJ
= 25oC, I
AS
= 20A, L = 8.5 mH)
EAS
800 mJ
Repetitive Peak Avalanche Power
(1μs, 25oC)
PARM
9800 W
Maximum Thermal Resistance
Thermal Resistance Junction to Ambient (Note 1)
Thermal Resistance Junction to Case
RθJA
RθJC
17
2
oC/W
Operating and Storage Temperature Range
Tj, TSTG
-65 to +150
oC
Electrical Characteristics
@ TA
= 25oC unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
V(BR)R
30 -
-
V IR
= 1.5mA
Forward Voltage Drop (per leg)
VF
-
0.41
0.50
0.34
—
0.45
0.54
0.37
0.5
V
IF
= 15A, T
j
= 25oC
IF
= 30A, T
j
= 25oC
IF
= 15A, T
j
= 125oC
IF
= 30A, T
j
= 125oC
Leakage Current (Note 2)
IR
-
0.33
40
1.5
100
mA
VR
= 30V, T
j
= 25oC
VR
= 30V, T
j
= 125oC
Notes: 1. Test Device on Heatsink (Black Aluminum, 45mm * 20mm * 12mm)
2. Short duration pulse test used to minimize self-heating effect.
3. RoHS revision 13.2.2003. High temperature solder exemption applied, see
EU Directive Annex Note 7.
__________
SBR is a registered trademark of Diodes Incorporated.
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