参数资料
型号: SBR3U20SA-13
厂商: Diodes Inc
文件页数: 1/4页
文件大小: 120K
描述: DIODE SBR 3A 20V SMA
标准包装: 5,000
系列: SBR®
二极管类型: 超级势垒
电压 - (Vr)(最大): 20V
电流 - 平均整流 (Io): 3A
电压 - 在 If 时为正向 (Vf)(最大): 390mV @ 3A
速度: 快速恢复 =< 500 ns,> 200mA(Io)
电流 - 在 Vr 时反向漏电: 500µA @ 20V
安装类型: 表面贴装
封装/外壳: DO-214AC,SMA
供应商设备封装: SMA
包装: 带卷 (TR)
SBR3U20SA
Document number: DS31209 Rev. 8 - 2
1 of 4
www.diodes.com
July 2009
? Diodes Incorporated
SBR3U20SA
NEW PRODUCT
SBR is a registered trademark of Diodes Incorporated.
3.0A SBR?
SURFACE MOUNT SUPER BARRIER RECTIFIER
SMA
Features
?
Ultra Low Forward Voltage Drop
?
Patented Super Barrier Rectifier Technology
?
Soft, Fast Switching Capability
?
150oC Operating Junction Temperature
?
Lead Free Finish, RoHS Compliant (Note 1)
?
Green Molding Compound (No Halogen and Antimony)
(Note 6)
Mechanical Data
?
Case: SMA
?
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
?
Moisture Sensitivity: Level 1 per J-STD-020D
?
Terminals: Lead Free Plating (M
atte Tin Finish.) Solderable
per MIL-STD-202, Method 208
?
Polarity Indicator: Cathode Band
?
Marking Information: See Page 3
?
Ordering Information: See Page 3
?
Weight: 0.064 grams (approximate)
Maximum Ratings
@TA
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VRM
20 V
RMS Reverse Voltage
VR(RMS)
14 V
Average Rectified Output Current (See Figure 1)
IO
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
Single Half Sine-Wave Superimposed on Rated Load
IFSM
66 A
Thermal Characteristics
Characteristic Symbol Value Unit
Maximum Thermal Resistance
Thermal Resistance Junction to Soldering (Note 2)
Thermal Resistance Junction to Ambient (Note 3)
Thermal Resistance Junction to Ambient (Note 4)
RθJS
RθJA
RθJA
44
127
97
oC/W
Operating and Storage Temperature Range
TJ, TSTG
-65 to +150
oC
Electrical Characteristics
@TA
= 25°C unless otherwise specified
Characteristic Symbol Min Typ Max Unit Test Condition
Reverse Breakdown Voltage (Note 5)
V(BR)R
20 - - V IR
= 0.75mA
Forward Voltage Drop
VF
-
-
-
-
0.26
0.29
0.35
0.28
0.30
0.33
0.39
0.32
V
IF
= 0.5A, T
J
= 25oC
IF
= 1.0A, T
J
= 25oC
IF
= 3.0A, T
J
= 25oC
IF
= 3.0A, T
J
= 125oC
Leakage Current (Note 5)
IR
-
-
-
-
500
100
μA
mA
VR
= 20V, T
J
= 25oC
VR
= 20V, T
J
= 125oC
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at http://www.diodes.com/quality/lead_free.html.
2. Theoretical R
θJS
calculated from the top center of the die straig
ht down to the PCB cathode tab solder junction.
3. FR-4 PCB, 2 oz. Copper, minimum recommended pad la
yout per http://www.diodes.com/datasheets/ap02001.pdf. TA
= 25oC
4. Polymide PCB, 2 oz. Copper, minimum reco
mmended pad layout per http://www.diodes.com/datasheets/ap02001.pdf
5. Short duration pulse test
used to minimize self-heating effect.
6. Product manufactured with Data Code 0924 (week 24, 2009) and newer are built with Green Molding Compound.
Top View
Bottom View
?
Green
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