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| 型号： | SBR80520LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 146K |
| 描述： | DIODE SCHOTTKY 20V 0.5A SOD-123 |
| 标准包装： | 3,000 |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 20V |
| 电流 - 平均整流 (Io)： | 500mA |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 385mV @ 500mA |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 250µA @ 20V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOD-123 |
| 供应商设备封装： | SOD-123 |
| 包装： | 带卷 (TR) |
    MBR0520LT1G, SBR80520LT1G, MBR0520LT3G, SBR80520LT3G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 20 V Average Rectified Forward Current (Rated VR, TL = 90 ?C) IF(AV) 0.5 A Non?Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM 5.5 A Storage Temperature Range Tstg ?65 to +150 ?C Operating Junction Temperature TJ ?65 to +125 ?C Voltage Rate of Change (Rated VR) dv/dt 1000 V/s ESD Ratings: Machine Model = C Human Body Model = 3B > 400 > 8000 V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance; Junction?to?Ambient (Note 1) RJA 206 ?C/W Thermal Resistance; Junction?to?Lead RJL 150 ?C/W 1. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 2) vF TJ = 25 ?C TJ = 100 ?C V (iF = 0.1 Amps) (iF = 0.5 Amps) 0.300 0.385 0.220 0.330 Maximum Instantaneous Reverse Current (Note 2) IR TJ = 25 ?C TJ = 100 ?C mA (VR = 10 V) (Rated DC Voltage = 20 V) 75 A 250 A 5 mA 8 mA 2. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2%. |
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相关代理商/技术参数 |
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| SBR80520LT3G | 功能描述:肖特基二极管与整流器 REC SPCL SKTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR8060 | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 60V 80A 2PIN DO-203AB - Bulk |
| SBR8060R | 制造商:Microsemi Corporation 功能描述:SCHOTTKY 60V 80A 2PIN DO-203AB - Bulk |
| SBR8100 | 制造商:DAESAN 制造商全称:Daesan Electronics Corp. 功能描述:CURRENT 8.0 AMPERES |
| SBR820 | 制造商:DAESAN 制造商全称:Daesan Electronics Corp. 功能描述:CURRENT 8.0 AMPERES |
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