- 您现在的位置：买卖IC网 > Datasheet目录146 > SBRB1045G (ON Semiconductor)DIODE SCHOTTKY 45V 10A D2PAK Datasheet资料下载
参数资料
| 型号： | SBRB1045G |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/6页 |
| 文件大小： | 159K |
| 描述： | DIODE SCHOTTKY 45V 10A D2PAK |
| 标准包装： | 50 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 45V |
| 电流 - 平均整流 (Io)： | 10A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 840mV @ 20A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 100µA @ 45V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-263-3，D²Pak（2 引线+接片），TO-263AB |
| 供应商设备封装： | D2PAK |
| 包装： | 管件 |
     MBRB1045G, MBRD1045G, SBRB1045G, SBRD81045T4G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 45 V Average Rectified Forward Current (Rated VR) TC = 135 ?C IF(AV) 10 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 135 ?C IFRM 20 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 (MBRB/SBRB) 70 (MBRD/SBRD) A Operating Junction and Storage Temperature Range (Note 1) TJ, Tstg ?65 to +175 ?C Voltage Rate of Change (Rated VR) dv/dt 10000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance, (MBRB1045G) Junction?to?Case (Note 2) Junction?to?Ambient (Note 2) (MBRD1045G) Junction?to?Case (Note 2) Junction?to?Ambient (Note 2) RJC RJA RJC RJA 1.0 50 2.43 68 ?C/W 2. When mounted using minimum recommended pad size on FR?4 board. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) (IF = 10 Amps, T J = 125 ?C) (IF = 20 Amps, T J = 125 ?C) (IF = 20 Amps, T J = 25 ?C) VF 0.57 0.72 0.84 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TJ = 125 ?C) (Rated dc Voltage, TJ = 25 ?C) IR 15 0.1 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ? 2.0% ORDERING INFORMATION Device Package Shipping? MBRB1045G D2PAK (Pb?Free) 50 Units / Rail SBRB1045G D2PAK (Pb?Free) 50 Units / Rail MBRB1045T4G D2PAK (Pb?Free) 800 Units / Tape & Reel SBRB1045T4G D2PAK (Pb?Free) 800 Units / Tape & Reel MBRD1045G DPAK (Pb?Free) 50 Units / Rail MBRD1045T4G DPAK (Pb?Free) 2,500 Units / Tape & Reel SBRD81045T4G DPAK (Pb?Free) 2,500 Units / Tape & Reel ?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. |
相关PDF资料 |
PDF描述 |
|---|---|
| SBRD8835LG | DIODE SCHOTTKY 35V 8A DPAK |
| SBRS8120T3G | DIODE SCHOTTKY 20V 1A SMB |
| SBRS8130LT3G | DIODE SCHOTTKY 30V 1A SMB |
| SBRS8140T3G | DIODE SCHOTTKY 40V 1A SMB |
| SBRS8190T3G | DIODE SCHOTTKY 90V 1A SMB |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBRB1045T4G | 功能描述:肖特基二极管与整流器 SCHOTTKY BARRIER RECT RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBRB106CTT4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| SBRB108T4G | 制造商:ON Semiconductor 功能描述: |
| SBRB1545CTG | 功能描述:肖特基二极管与整流器 SCHOTTKY RECT 15A 45V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBRB1545CTT4G | 功能描述:整流器 REC D2PAK SPCL SHTKY RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。