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参数资料
| 型号： | SBRD8835LG |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/5页 |
| 文件大小： | 109K |
| 描述： | DIODE SCHOTTKY 35V 8A DPAK |
| 标准包装： | 75 |
| 系列： | SWITCHMODE™ |
| 二极管类型： | 肖特基 |
| 电压 - (Vr)（最大）： | 35V |
| 电流 - 平均整流 (Io)： | 8A |
| 电压 - 在 If 时为正向 (Vf)（最大）： | 510mV @ 8A |
| 速度： | 快速恢复 =< 500 ns，> 200mA（Io） |
| 电流 - 在 Vr 时反向漏电： | 1.4mA @ 35V |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-252-3，DPak（2 引线+接片），SC-63 |
| 供应商设备封装： | DPAK-3 |
| 包装： | 管件 |
    MBRD835LG, MBRD835LT4G, SBRD8835LG, SBRD8835LT4G http://onsemi.com 2 MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V V RRM RWM VR 35 V Average Rectified Forward Current (At Rated VR, TC = 88 °C) IF(AV) 8.0 A Peak Repetitive Forward Current (At Rated VR, Square Wave, 20 kHz, TC = 80 °C) IFRM 16 A Non?Repetitive Peak Surge Current (Surge applied at rated load conditions, halfwave, single phase, 60 Hz) IFSM 75 A Repetitive Avalanche Current (Current Decaying Linearly to Zero in 1 s, Frequency Limited by TJmax) IAR 2.0 A Storage / Operating Case Temperature Tstg ?65 to +150 °C Operating Junction Temperature (Note 1) TJ ?65 to +150 °C Voltage Rate of Change (Rated VR) dv/dt 10,000 V/s Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction?to?Ambient: dPD/dTJ < 1/R JA. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit Thermal Resistance ? Junction ?to?Case RJC 2.8 °C/W Thermal Resistance ? Junction ?to?Ambient (Note 2) RJA 80 °C/W 2. Rating applies when surface mounted on the minimum pad size recommended. ELECTRICAL CHARACTERISTICS Characteristic Symbol Value Unit Maximum Instantaneous Forward Voltage (Note 3) (iF = 8 Amps, T C = +25 °C) (iF = 8 Amps, T C = +125 °C) VF 0.51 0.41 V Maximum Instantaneous Reverse Current (Note 3) (Rated dc Voltage, TC = +25 °C) (Rated dc Voltage, TC = +100 °C) IR 1.4 35 mA 3. Pulse Test: Pulse Width = 300 s, Duty Cycle ≤ 2%. |
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相关代理商/技术参数 |
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| SBRD8835LT4 | 制造商:ON Semiconductor 功能描述: |
| SBRD8835LT4G | 功能描述:肖特基二极管与整流器 REC DPAK SPCL SHTKY RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBR-EV-29-P-ML | 功能描述:I/O 连接器 SAS Elevated Socket 29 pin socket RoHS:否 制造商:Hirose Connector 产品:Plugs 系列:DH 端口数量: 位置/触点数量:51 节距:1 mm 触点电镀: 触点材料: 型式:Male 电流额定值:0.5 A 安装风格:Cable 端接类型:IDC 颜色: 安装角: |
| SBR-EV-29-P-MLC101 | 制造商:3M Electronic Products Division 功能描述:CONN SOCKET SAS 29POS VERT ELEV |
| SBR-EV29P-MLC101 | 功能描述:IC 与器件插座 SAS STANDOFF 29 PIN 2.5MM SKT RoHS:否 制造商:3M Electronic Solutions Division 产品: 节距: 排数: 位置/触点数量: 触点电镀: 安装风格: 端接类型: 插座/封装类型: 工作温度范围: |
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