- 您现在的位置：买卖IC网 > PDF目录54463 > SBS806M 0.5 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE PDF资料下载
参数资料
| 型号： | SBS806M |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.5 A, 30 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| 封装： | MCPH5, 5 PIN |
| 文件页数： | 1/3页 |
| 文件大小： | 41K |
| 代理商： | SBS806M |
SBS806M
No.7029-1/3
Applications
High frequency rectification (switching regulators,
converters, choppers).
Features
Low forward voltage (IF=0.3A, VF max=0.4V)
(IF=0.5A, VF max=0.47V).
Composite type with 2 low VF SBDs in one package,
facilitating high-density mounting.
The SBS806M is composed of 2 chips that are
equivalent to the SBS006.
Ultrasmall package facilitates miniaturization in end
products.
Specifications
Absolute Maximum Ratings at Ta=25
°C(Value per element)
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
0.5
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C (Value per element)
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=0.5mA
30
V
Forward Voltage
VF1IF=0.3A
0.35
0.40
V
VF2IF=0.5A
0.42
0.47
V
Reverse Current
IR
VR=10V
200
A
Interterminal Capacitance
C
VR=10V, f=1MHz
20
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Thermal Resistance
Rchj-a
Mounted on a ceramic board (600mm2!0.8mm)
110
°C / W
Marking : SA
Since this device is a low-VF SBD, the IR is large. It is inclined to break due to thermal
Caution!
runaway caused by reverse loss in case of severe conditions such as high temperature / voltage.
Please make a safe design taking heat dissipation into consideration.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7029
SBS806M
Package Dimensions
unit : mm
1310
[SBS806M]
73001 GI IM
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
Schottky Barrier Diode
30V, 0.5A Rectifier
1 : Anode (Diode 1)
2 : No Contact
3 : Anode (Diode 2)
4 : Cathode (Diode 2)
5 : Cathode (Diode 1)
SANYO : MCPH5
(Top view)
(Bottom view)
0.25
0.07
2.1
1.6
2.0
0.65
0.3
0.85
0.15
1
32
4
5
12
3
54
相关PDF资料 |
PDF描述 |
|---|---|
| SBS808M | 1 A, 15 V, 2 ELEMENT, SILICON, SIGNAL DIODE |
| SBT150-04J | 15 A, 40 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBT150-10JS | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBT150-10LS | 15 A, 100 V, SILICON, RECTIFIER DIODE, TO-220AB |
| SBT250-04L | 25 A, 40 V, SILICON, RECTIFIER DIODE |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBS806M-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:DIODE SCH ARR 30V 0.5A SC-82 |
| SBS808M | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Schottky Barrier Diode 15V, 1A Rectifier |
| SBS811 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:SBS811 |
| SBS811-S-TL-E | 功能描述:肖特基二极管与整流器 RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBS811-TL-E | 功能描述:肖特基二极管与整流器 SBD DUAL PARALLEL 2A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
发布紧急采购，3分钟左右您将得到回复。