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参数资料
| 型号： | SBS814 |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | ULTRA SMALL, VEC8, 8 PIN |
| 文件页数： | 1/4页 |
| 文件大小： | 34K |
| 代理商： | SBS814 |
SBS814
No. A0157-1/4
Applications
High frequency rectification (switching regulators, converters, choppers).
Features
Small switching noise.
Low forward voltage (IF=1A, VF max=0.45V).
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Repetitive Peak Reverse Voltage
VRRM
30
V
Nonrepetitive Peak Reverse Surge Voltage
VRSM
30
V
Average Output Current
IO
1.0
A
Surge Forward Current
IFSM
50Hz sine wave, 1 cycle
10
A
Junction Temperature
Tj
--55 to +125
°C
Storage Temperature
Tstg
--55 to +125
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Reverse Voltage
VR
IR=2.0mA
30
V
Forward Voltage
VF1IF=500mA
0.39
V
VF2IF=1.0A
0.45
V
Reverse Current
IR
VR=15V
360
A
Interterminal Capacitance
C
VR=10V, f=1MHz
27
pF
Reverse Recovery Time
trr
IF=IR=100mA, See specified Test Circuit.
10
ns
Rth(j-a)1
Mounted in Cu-foiled area of 1.92mm2!0.03mm
95
°C / W
Thermal Resistance
on glass epoxy board
Rth(j-a)2
Mouted on a ceramic board (1200mm2!0.8mm)
65
°C / W
Marking : SG
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENA0157
N2505SB MS IM TB-00001896
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SBS814
Low VF Schottky Barrier Diode
30V, 1.0A Rectifier
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SBS814-TL-E | 制造商:SANYO 功能描述:30V 1A 8VEC Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:DIODE ARR 30V 1A VEC8 制造商:Sanyo 功能描述:0 |
| SBS817 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low VF Schottky Barrier Diode 15V, 2.0A Rectifier |
| SBS817-TL-E | 功能描述:肖特基二极管与整流器 SBD DUAL PARALLEL 2A 15V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SBS818 | 制造商:SANYO 制造商全称:Sanyo Semicon Device 功能描述:Low VF Schottky Barrier Diode 30V, 2.0A Rectifier |
| SBS818-TL-E | 功能描述:肖特基二极管与整流器 SBD DUAL PARALLEL 2A 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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