参数资料
型号: SBT1830
厂商: DIOTEC SEMICONDUCTOR AG
元件分类: 参考电压二极管
英文描述: 18 A, 30 V, SILICON, RECTIFIER DIODE, TO-220AC
封装: GREEN, PLASTIC PACKAGE-2
文件页数: 1/2页
文件大小: 115K
代理商: SBT1830
SBT1820 … SBT1845
SBT1820 … SBT1845
Schottky Barrier Rectifiers – Single Diode
Schottky-Barrier-Gleichrichter – Einzeldiode
Version 2011-06-27
Dimensions - Mae [mm]
Nominal current – Nennstrom
18 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
20...45 V
Plastic case – Kunststoffgehuse
TO-220AC
Weight approx. – Gewicht ca.
1.8 g
Plastic material has UL classification 94V-0
Gehusematerial UL94V-0 klassifiziert
Standard packaging in tubes
Standard Lieferform in Stangen
Green Molding
Halogen-Free1
Typical Applications
Typische Anwendungen
Bypass Diodes – best trade-off between VF and IR 2)
Free-Wheeling Diodes
High Frequent Output Rectification
Bypass-Dioden – optimales VF und IR 2)
Freilaufdioden
Hochfrequenz-Ausgangsgleichrichtung
Maximum ratings and Characteristics
Grenz- und Kennwerte
Type
Typ
Repetitive / Surge peak reverse voltage
Periodische- / Spitzen-Sperrspannung
VRRM [V] / VRSM [V]
Forward Voltage
Durchlass-Spannung
VF [V] Tj = 125°C
Forward voltage
Durchlass-Spannung
VF [V] Tj = 25°C
IF = 5 A
IF = 18 A
SBT1820
20
typ. 0.33
< 0.50
< 0.58
SBT1830
30
typ. 0.33
< 0.50
< 0.58
SBT1840
40
typ. 0.33
< 0.50
< 0.58
SBT1845
45
typ. 0.33
< 0.50
< 0.58
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TC = 100°C
IFAV
18 A
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
55 A 3)
Peak forward surge current, 50/60 Hz half sine-wave
Stostrom für eine 50/60 Hz Sinus-Halbwelle
SBT1820...
SBT1845
TA = 25°C
IFSM
280/320 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
390 A2s
Junction temperature – Sperrschichttemperatur
in DC forward mode – bei Gleichstrom-Durchlassbetrieb
Tj
-50...+150°C
≤ 200°C
1
From 4Q/2011 – Ab 4Q/2011
2
For more details, ask for the Diotec Application Note “Reliability of Bypass Diodes”
Weitere Infos in der Diotec Applikationsschrift Reliability of Bypass Diodes”
3
Max. temperature of the case TC = 100°C – Max. Temperatur des Gehuses TC = 100°C
Diotec Semiconductor AG
http://www.diotec.com/
1
15
.7
13
.2
3
3.
4
10±0.2
1.5
0.9
5.08
3.8
Type
Typ
1 2 3
4
1 2 3
4
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