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参数资料
| 型号： | SBYV26C-E3/54 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 1 A, 600 V, SILICON, SIGNAL DIODE, DO-204AL |
| 封装： | ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN |
| 文件页数： | 2/5页 |
| 文件大小： | 75K |
| 代理商： | SBYV26C-E3/54 |
www.vishay.com
For technical questions within your region, please contact one of the following:
Document Number: 88735
2
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SBYV26C
Vishay General Semiconductor
Notes
(1) Thermal resistance from junction to ambient at 0.375" (9.5 mm) lead length, mounted on PCB with 0.5" x 0.5" (12 mm x 12 mm) copper pads
(2) Thermal resistance from junction to lead at 0.375" (9.5 mm) lead length with both leads attached to heatsink
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Minimum avalanche
breakdown voltage
100 μA
VBR
600
V
Maximum instantaneous
forward voltage
1.0 A
TJ = 25 °C
VF
2.5
V
TJ = 175 °C
1.3
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 165 °C
150
Max. reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
30
ns
Maximum junction capacitance
4.0 V, 1 MHz
CJ
45
pF
Maximum reverse recovery
current slope
IF = 1 A, VR = 30 V, dIf/dt = - 1 A/μs
dIr/dt
7.0
A/μs
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Typical thermal resistance
RJA(1)
70
°C/W
RJL(2)
16
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
SBYV26C-E3/54
0.339
54
5500
13" diameter paper tape and reel
SBYV26C-E3/73
0.339
73
3000
Ammo pack packaging
SBYV26CHE3/54 (1)
0.339
54
5500
13" diameter paper tape and reel
SBYV26CHE3/73 (1)
0.339
73
3000
Ammo pack packaging
0
0.6
0.8
1.0
1.2
0
25
50
75
100
125
150
175
Average
Forward
Rectified
Current
(A)
Temperature (°C)
0.4
0.2
Mounted on P.C.B.
Lead Mounted
on Heatsink
T
A = Ambient Temperature
T
L = Lead Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0.2
0.4
0.6
0.8
1.0
1.2
Average Forward Current (A)
A
v
erage
Power
Lo
ss
(W)
D = t
p/T
t
p
T
D = 0.1
D = 0.2
D = 0.3
D = 0.5 D = 0.8
D = 1.0
相关PDF资料 |
PDF描述 |
|---|---|
| SBYV27-100-E3/54 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-200-E3/73 | 2 A, 200 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-50-E3/54 | 2 A, 50 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-150-E3/73 | 2 A, 150 V, SILICON, RECTIFIER DIODE, DO-204AC |
| SBYV27-100-E3/73 | 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-204AC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SBYV26C-E3-73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
| SBYV26CHE3/54 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SBYV26CHE3/73 | 功能描述:整流器 600 Volt 1.0A 30ns 30 Amp IFSM RoHS:否 制造商:Vishay Semiconductors 产品:Standard Recovery Rectifiers 配置: 反向电压:100 V 正向电压下降: 恢复时间:1.2 us 正向连续电流:2 A 最大浪涌电流:35 A 反向电流 IR:5 uA 安装风格:SMD/SMT 封装 / 箱体:DO-221AC 封装:Reel |
| SBYV26CHE3-54 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
| SBYV26CHE3-73 | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Glass Passivated Ultrafast Rectifier |
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