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| 型号： | SC00080912 |
| 厂商： | Skyworks Solutions Inc |
| 文件页数： | 2/5页 |
| 文件大小： | 0K |
| 描述： | CAP THIN FILM 0.8PF 100V SMD |
| 产品培训模块： | Diodes and Passive Overview |
| 标准包装： | 100 |
| 电容： | 0.80pF |
| 电压 - 额定： | 100V |
| 容差： | ±20% |
| 安装类型： | 表面贴装 |
| 封装/外壳： | 非标准型芯片 |
| 工作温度： | -65°C ~ 200°C |
| 特点： | RF，高 Q 值，低损耗 |
| 包装： | 散装 |
| 尺寸/尺寸： | 0.472" L x 0.472" W（12.00mm x 12.00mm） |
| 高度 - 座高（最大）： | 0.006"（0.15mm） |
| 其它名称： | 863-1212 |
DATA SHEET ? SC SERIES: MIS CHIP CAPACITORS
Table 1. MIS Capacitors Absolute Maximum Ratings
Parameter
Symbol
Minimum
Typical
Maximum
Units
Dielectric withstand voltage
100
V
Operating temperature
Storage temperature
T OP
T STG
– 65
– 65
+ 200
+ 200
° C
° C
Note:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value.
CAUTION : Although this device is designed to be as robust as possible, Electrostatic Discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
Table 2. MIS Chip Capacitors Electrical Specifications (Note 1)
Parameter
Symbol
Test Condition
Min
Typical
Max
Units
Capacitance
Temperature coefficient
Capacitance tolerance
0.8
– 20
50
1000
+20
pF
ppm/°C
%
10
Operating temperature
Dielectric withstand voltage
Insulation resistance
Leakage current
T OP
– 65
100
5
<1
+200
° C
V
M Ω
nA
Note 1: Performance is guaranteed only under the conditions listed in this Table.
Electrical and Mechanical Specifications
The absolute maximum ratings of the MIS chip capacitors are
provided in Table 1. Electrical specifications are provided in
Table 2.
A graph of typical insertion loss versus frequency is shown in
Figure 1 . This data is taken from an actual test circuit with series
mounted beam - lead or chip capacitors on a 50 Ω microstrip
transmission line. The apparent higher loss at lower frequencies
on the lower capacitance units is strictly due to the capacitive
reactance of the capacitor.
Table 3 provides a list of the available MIS chip capacitors (by part
number) and the capacitance and chip dimensions for each one.
Performance
Tests on typical MIS capacitors at the L and S bands show
insertion loss to be 1/2 to 1/3 that of equivalent ceramic type
capacitors, without any of the associated resonance problems.
Power tests indicate that the only limitation is the actua l
breakdown voltage of the device .
Figure 2 illustrates the use of MIS capacitors in a typical Single -
Pole, Double - Throw (SPDT) circuit.
Package Dimensions
Figure 3 provides a visual representation of the capacitor chip
sizes and part markings.
Skyworks Solutions, Inc. ? Phone [781] 376 - 3000 ? Fax [781] 376 - 3100 ? sales@skyworksinc.com ? www.skyworksinc.com
2
May 25, 2011 ? Skyworks Proprietary I nformation ? Products and Product Information are Subject to Change Without Notice ? 200136G
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