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参数资料
| 型号： | SC1154CSW |
| 厂商： | Semtech Corporation |
| 英文描述： | PROGRAMMABLE SYNCHRONOUS DC/DC HYSTERETIC CONTROLLER FOR ADVANCED PROCESSORS |
| 中文描述： | 可编程同步DC / DC滞控制器的先进的处理器 |
| 文件页数： | 6/18页 |
| 文件大小： | 164K |
| 代理商： | SC1154CSW |
SC1154
PROGRAMMABLE SYNCHRONOUS
DC/DC HYSTERETIC CONTROLLER
FOR ADVANCED PROCESSORS
2000 SEMTECH CORP.
652 MITCHELL ROAD NEWBURY PARK CA 91320
PRELIMINARY - March 1, 2000
14
MATERIALS LIST
Quantity
Reference
Part/Description
Vendor
Notes
1
C5
0.001F
6
C1-C4, C8, C11
0.01F
3
C17-C19
150F, 16V (TPS)
AVX
7
C6,C7,C9,C12,C16,C20, C27
0.1F
2
C13,C14
0.33F
6
C21-C26
470F, 6.3V (TPS)
AVX
2
C10,C15
2.2F, 16V
1
D1
MBRD1035
MOT
1
L1
1H, DO5022P-102
Coilcraft
1
L2
1.5H, DO5022P-152HC
Coilcraft
1
Q1
IRL3103NS, D2PAK
Int. Rect.
1
Q2
IRL2203NS, D2PAK
Int. Rect.
2RA,RB
0
1R1
2K
2
R2,R4
1K
1R3
2.7K
1
R5
100
1
R6
20K
1
R7
150
3
R8,R9,R10
10K
1
R11
2.2
1
R12
3.9
1
U1
SC1154, SO-28
SEMTECH
Layout guidelines
1. Locate R8 and C5 close to pins 6 and 7.
2. Locate C6 close to pins 5 and 7.
3. Components connected to IOUT, DROOP, OCP, VHYST, VREFB, VSENSE, and SOFTST should be refer-
enced to AGND.
4. The bypass capacitors C10 and C15 should be placed close to the IC and referenced to DRVGND.
5. Locate bootstrap capacitor C13 close to the IC.
6. Place bypass capacitor C14 close to Drain of the top FET and Source of the bottom FET to be effective.
7. Route HISENSE and LOSENSE close to each other to minimize induced differential mode noise.
8. Bypass a high frequency disturbance with ceramic capacitor at the point where HISENSE is connected to Vin.
9. Input bulk capacitors should placed as close as possible to the power FETs because of the very high ripple cur-
rent flow in this pass.
10. If Schottky diode used in parallel with a synchronous (bottom) FET, to achieve a greater efficiency at lower
Vout settings, it needs to be placed next to the aforementioned FET in very close proximity.
11. Since the feedback path relies on the accurate sampling of the output ripple voltage, the best results can be
achieved by connecting the AGND to the ground side of the bulk output capacitors.
12. DRVGND pin should be tight to the main ground plane utilizing very low impedance connection, e.g., multiple
vias.
13. In order to prevent substrate glitching, a small (0.5A) Schottky diode should be placed in close proximity to the
chip with the cathode connected to BOOTLO and anode connected to DRVGND.
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| SC1155 | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Programmable Synchronous DC/DC Hysteretic Controller with VRM 9.0VID Range |
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| SC1155CSW.TR | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:PROGRAMMABLE SYNCHRONOUS DC/DC HYSTERETIC CONTROLLER WITH VRM 9.0 VID RANGE |
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