参数资料
型号: SC122ULTRT
厂商: Semtech
文件页数: 10/13页
文件大小: 0K
描述: IC REG BST SYNC 3.3V 95MA 6MLPD
标准包装: 1
类型: 升压(升压)
输出类型: 固定
输出数: 1
输出电压: 3.3V
输入电压: 0.7 V ~ 1.6 V
PWM 型: 混合物
频率 - 开关: 1.2MHz
电流 - 输出: 95mA
同步整流器:
工作温度: 0°C ~ 70°C
安装类型: 表面贴装
封装/外壳: 6-MLPD-UT
包装: 标准包装
供应商设备封装: 6-MLPD-UT(1.5x2.0)
其它名称: SC122ULTRTDKR
SC122
Applications Information (continued)
A suggested very low duty cycle refresh oscillator circuit
is included on the SC122 EVB-RM, the SC122 Evaluation
Board with Refresh Modulation.
limits will be invoked in reverse order as the output
voltage falls through its various startup voltage thresh-
olds. How far the output voltage drops depends on the
load voltage vs. current characteristic.
Regulator Startup, Short Circuit Protection,
and Current Limits
The SC122 permits power up at input voltages from 0.85V
to 1.6V. Startup current limiting of the internal switching
n-channel and p-channel FET power devices protects
them from damage in the event of a short between OUT
and GND. This protection prevents startup into an exces-
sive load.
At the beginning of the cycle, the p-channel FET between
the LX and OUT pins turns on with its current limited to
approximately 100mA, the short-circuit output current.
When V OUT approaches V IN (still below 1.7V), the n-channel
current limit is set to 350mA (the p-channel limit is dis-
abled), an internal oscillator turns on (approximately
200kHz), and a fixed 75% duty cycle PWM-type operation
begins. When the output voltage exceeds 1.7V, fixed fre-
quency PSAVE operation begins, with the duty cycle deter-
mined by an n-channel FET peak current limit of 350mA.
Note that startup with a regulated active load is not the
same as startup with a resistive load. The resistive load
output current increases proportionately as the output
voltage rises until it reaches V OUT /R LOAD , while a regulated
active load presents a constant load as the output voltage
rises from 0V to V OUT . Note also that if the load applied to
the output exceeds the startup current limit, the criterion
to advance to the next startup stage may not be achieved.
In this situation startup may pause at a reduced output
voltage until the load is reduced further.
Output Overload and Recovery
As the output load increases, the duration of each burst
increases, and the time between bursts decreases. The
output load reaches its maximum when the burst dura-
tion becomes indefinite (and the time between bursts
becomes zero). At this time, all the energy stored in the
inductor during the on-time portion of each burst cycle is
discharged into the output during off-time. The inductor
current reduces to zero just as the next on-time begins.
Above this critical maximum load, the output voltage will
decrease rapidly, and the startup current and switching
A reduction in input voltage, such as a discharging
battery, will lower the load current at which overload
occurs. At the overload threshold, the energy stored in
the inductor at the end of each on-time is the same for all
V IN . But since the voltage increase above the input voltage
is greater, the available output current, I OUT = P/(V OUT - V IN ),
must decrease.
When an overload has occurred, the load must be
decreased to permit recovery. The conditions required
for overload recovery are identical to those required for
successful initial startup.
Anti-ringing Circuitry
When both FET switches are simultaneously turned off,
an internal switch between the IN and LX pins is closed.
This provides a moderate resistance path across the
inductor to dampen the oscillations at the LX pin. This
effectively reduces EMI that can develop from the reso-
nant circuit formed by the inductor and the drain capaci-
tance at LX. The anti-ringing circuitry is disabled between
PSAVE bursts.
Inductor Selection
The inductance value primarily affects the amplitude of
inductor current ripple ( Δ I L ). The inductor peak current
I L-max = I L-avg + Δ I L /2, where I L-avg is the inductor current aver-
aged over a full on/off cycle, is subject to the n-channel
FET peak current limit I LIM(N) . The inductor average current
is equal to the output load current. Increasing inductance
reduces Δ I L and therefore increases the maximum sup-
portable output current.
The performance plots of this datasheet were obtained
with L = 4.7μH. Larger values of inductance can provide
higher maximum output currents.
Any chosen inductor should have low DCR, compared to
the R DS-ON of the FET switches, to maintain effi ciency. For
DCR << R DS-ON , further reduction in DCR will provide
diminishing benefit. The inductor I SAT value must exceed
I LIM(N) . The inductor self-resonant frequency should exceed
10
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