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参数资料
| 型号： | SC1403ITSTRT |
| 元件分类： | 稳压器 |
| 英文描述： | 1 A DUAL SWITCHING CONTROLLER, 380 kHz SWITCHING FREQ-MAX, PDSO28 |
| 封装： | LEAD FREE, MO-153AE, TSSOP-28 |
| 文件页数： | 5/31页 |
| 文件大小： | 590K |
| 代理商： | SC1403ITSTRT |
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13
2004 Semtech Corp.
SC1403
POWER MANAGEMENT
United States Patent No. 6,377,032
www.semtech.com
Applications Information
Applications Information (Cont.)
.
S
2
G
GATE
f
V
C
2
1
P
=
Cg is the effective gate capacitance, equal to the Total Gate Charge
divided by VGS from the vendor datasheet, and is 7.9nF for the
IRF7413. V in the above formula is the final gate-source voltage
on the mosfet, 5V for the SC1403.
The total mosfet losses is the sum of the three loss components.
GATE
SWITCHING
CONDUCTION
DISS
_
TOTAL
P
+
=
The mosfet dissipation under conditions of 15V input, 6A load,
and ambient temperature of 25C, can be determined as:
DNOM = 0.22
IL = 1.26A
IMIN = 5.37A
IMAX = 6.63A
IRMS = 4.88A
Rds(on) (100C) = 18 mohm
PCONDUCTION = 429mW
PSWITCHING = 97mW
PGATE = 30mW
PTOTAL_DISS = 429 + 97 + 30 = 556 mW
The junction temperature rise resulting from the power dissipation
is calculated as:
JA
T
J
θ
P
T
=
P
T is the total device dissipation, and θJA is the package thermal
resistance, which is 50°C/W for the IRf7413. The junction tem-
perature rise is then:
T
J = 0.556W
.
50°C/W = 27.8°
This is a modest temperature rise, so no special heat sinking is
required when laying out the mosfet.
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