参数资料
型号: SC175R100A5B
厂商: VISHAY INTERTECHNOLOGY INC
元件分类: 整流器
英文描述: 100 V, SILICON, RECTIFIER DIODE
封装: DIE-1
文件页数: 1/6页
文件大小: 147K
代理商: SC175R100A5B
SCHOTTKY DIE 175 x 175 mils
SC175.....5. Series
Bulletin I0511J rev. C 03/07
a
c
125 (492)
40 (157)
d
b
D
Wafer flat alligned with
side b of the die
A
C
0.35 ± 0.01
(14 ± 0.4)
NOT TO SCALE
5. DIMENSIONS AND TOLERANCES
SC175
R015x5x
125
15
n.a. contact factory
SC175
S020x5x
150
20
n.a. contact factory
SC175
S030x5x
150
30
n.a. contact factory
SC175
S045x5x
150
45
4.44 + 0, -0.01 4.44 + 0, -0.01 4.19 + 0, -0.01 4.19 + 0, -0.01
1 ± 0.15
(175 + 0, -0.4)
(175 + 0, -0.4) (165 + 0, -0.4)
(165 + 0, -0.4)
40 ± 0.2
SC175
S060x5x
150
60
4.44 + 0, -0.01 4.44 + 0, -0.01 4.19 + 0, -0.01 4.19 + 0, -0.01
1 ± 0.15
(175 + 0, -0.4)
(175 + 0, -0.4) (165 + 0, -0.4)
(165 + 0, -0.4)
40 ± 0.2
SC175
H045x5x
175
45
n.a. contact factory
SC175
H100x5x
175
100
4.44 + 0, -0.01 4.44 + 0, -0.01 4.19 + 0, -0.01 4.19 + 0, -0.01
1 ± 0.15
(175 + 0, -0.4)
(175 + 0, -0.4) (165 + 0, -0.4)
(165 + 0, -0.4)
40 ± 0.2
SC175
H150x5x
175
150
n.a. contact factory
Device
TJ Max.
VR
A
B
C
D
diameter
#
(°C)
(V)
NOTES:
1. ALL DIMENSIONS ARE SHOWN IN
MILLIMETERS (MILS)
2. CONTROLLING DIMENSION: (MILS)
3. LETTER DESIGNATION:
A = Anode (Top Metal)
C = Cathode (Back Metal)
D = Reject Ink Dot (only on non-conforming dies)
4. SAWING:
Recommended Blade
SEMITEC S1025 QS00 Blade
Sawing Street
0.05 ± 0.005
(2 ± 0.2)
www.vishay.com
1
Document Number: 93875
相关PDF资料
PDF描述
SC175S100A5B 100 V, SILICON, RECTIFIER DIODE
SC200R150A5B 125 V, SILICON, RECTIFIER DIODE
SC200S150A5B 150 V, SILICON, RECTIFIER DIODE
SC201-4 0.5 A, 400 V, SILICON, SIGNAL DIODE
SC220H045A5B 45 V, SILICON, RECTIFIER DIODE
相关代理商/技术参数
参数描述
SC1766 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:BATTERY CHARGE CONTROLLER
SC1766CS08 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:BATTERY CHARGE CONTROLLER
SC1766CS14 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:BATTERY CHARGE CONTROLLER
SC177 制造商:TE Connectivity 功能描述:- Bulk
SC177E6 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:SIEMENS ANNOUNCES A SUB-MICTON GENERATION OF CHANNELLESS GATE-ARRAYS BASED ON THE PROVEN MEGALOGIC PROCESS