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参数资料
| 型号： | SC220S030A5P |
| 厂商： | VISHAY INTERTECHNOLOGY INC |
| 元件分类： | 整流器 |
| 英文描述： | 30 V, SILICON, RECTIFIER DIODE |
| 封装： | WAFER |
| 文件页数： | 2/6页 |
| 文件大小： | 163K |
| 代理商： | SC220S030A5P |
SC220.....5.
Bulletin I0490J rev. A 03/07
Document Number: 93876
www.vishay.com
2
Electrical Characteristics
Device
Description
Minimum Order Quantity
#
Die in Sale Package
Packaging
SC220xxxxx5
B
Inked Probed Unsawn Wafer (Wafer in Box)
273
SC220xxxxx5
R
Probed Die in Tape & Reel
8000
SC220xxxxx5
P
Probed Die in Waffle Pack
273
SC220xxxxx5
F
Inked Probed Sawn Wafer on Film
273
Device
TJ Max.
VR
Typ. IR @ 25°C Typ. IR @ 125°C Max. VF @ IF @ 25°C
Package
#
(°C)
(V)
(μA)
(mA)
(V)
Style
SC220
R015x5x
125
15
9000
2500
0.37 @ 55A
SC220
S020x5x
150
20
n.a. contact factory
SC220
S030x5x
150
30
600
300
0.49 @ 55A
SC220
S045x5x
150
45
450
210
0.54 @ 55A
SC220
S060x5x
150
60
n.a. contact factory
SC220
H045x5x
175
45
60
35
0.61 @ 55A
SC220
H100x5x
175
100
26
20
0.81 @ 55A
SC220
H150x5x
175
150
n.a. contact factory
D-61 genIII
package
D-61 genIII
package
D-61 genIII
package
D-61 genIII
package
D-61 genIII
package
Device
Metal Thickness
#
Front Metal
Back Metal
SC220xxxx
A5x
Bondable
--
Al (1% Si) 30 k
--
Cr 1 k
Ni 2 k
Ag 3 k
SC220xxxx
S5x
Solderable
Ti 2 k
Ni 1 k
Ag 35 k
Cr 1 k
Ni 2 k
Ag 3 k
Mechanical Data
Recommended Storage Environment: Store in original container, in dessicated nitrogen, with no contamination.
Shelf life for parts stored in above condition is 2 years.
If the storage is done in normal atmosphere shelf life is reduced to six months.
相关PDF资料 |
PDF描述 |
|---|---|
| SC220S030A5R | 30 V, SILICON, RECTIFIER DIODE |
| SC220S030S5B | 30 V, SILICON, RECTIFIER DIODE |
| SC220S045S5R | 45 V, SILICON, RECTIFIER DIODE |
| SC220S060A5R | 60 V, SILICON, RECTIFIER DIODE |
| SC220S060S5R | 60 V, SILICON, RECTIFIER DIODE |
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| SC-2210 | 制造商:Nidec Copal 功能描述:SWIT ROTARY 10 SLOT SHAFT PC PINS 0.1A 5VDC - Bulk |
| SC22101 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES |
| SC22101CN | 制造商:未知厂家 制造商全称:未知厂家 功能描述:ELECTRICALLY ERASABLE PROGRAMMABLE MEMORIES |
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