Device User Guide — 9S12DT128DGV2/D V02.15
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Freescale Semiconductor
The setup time can be ignored for this operation.
A.3.1.4 Mass Erase
Erasing a NVM block takes:
The setup time can be ignored for this operation.
A.3.1.5 Blank Check
The time it takes to perform a blank check on the Flash or EEPROM is dependant on the location of the
first non-blank word starting at relative address zero. It takes one bus cycle per word to verify plus a setup
of the command.
Table A-11 NVM Timing Characteristics
Conditions are shown in (Table A-4) unless otherwise noted
Num C
Rating
Symbol
Min
Typ
Max
Unit
1
D External Oscillator Clock
fNVMOSC
0.5
50 1
NOTES:
1. Restrictions for oscillator in crystal mode apply!
MHz
2
D Bus frequency for Programming or Erase Operations
fNVMBUS
1
MHz
3
D Operating Frequency
fNVMOP
150
200
kHz
4
P Single Word Programming Time
tswpgm
46 2
2. Minimum Programming times are achieved under maximum NVM operating frequency fNVMOP and maximum bus frequency
fbus.
74.5 3
3. Maximum Erase and Programming times are achieved under particular combinations of fNVMOP and bus frequency fbus. s
5
D Flash Row Programming consecutive word 4
4. Row Programming operations are not applicable to EEPROM
tbwpgm
s
6
D Flash Row Programming Time for 32 Words
(4)tbrpgm
s
7
P Sector Erase Time
tera
20 5
5. Minimum Erase times are achieved under maximum NVM operating frequency fNVMOP.
ms
8
P Mass Erase Time
tmass
ms
9
D Blank Check Time Flash per block
tcheck
11 6
6. Minimum time, if first word in the array is not blank
32778 7
7. Maximum time to complete check on an erased block
tcyc
10
D Blank Check Time EEPROM per block
tcheck
tcyc
t
era
4000
1
f
NVMOP
---------------------
≈
t
mass
20000
1
f
NVMOP
---------------------
≈
t
check
location t
cyc
10 t
cyc
+
≈