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参数资料
| 型号： | SCA-CA256ES |
| 厂商： | SEMICOA CORP |
| 元件分类： | 光敏二极管 |
| 英文描述： | PIN PHOTO DIODE |
| 文件页数： | 2/3页 |
| 文件大小： | 134K |
| 代理商： | SCA-CA256ES |
SCA-CA256ES
Silicon PIN Photodiode Array
P r e l im in a r y Da ta S h e e t
Copyright
2006
Semicoa
Rev. 5.1
333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541
Page 2 of 3
www.SEMICOA.com
DEVICE CHARACTERISTICS
Mechanical Characteristics
Optical Characteristics
Active Area Size
d
0.85 x 0.85
mm
Spectral Response
λ
400 to 1100
nm
Pixel Pitch
A
1.0
mm
Peak Sensitivity Wavelength
λp
850
nm
characteristics specified at TA = 25°C
Electrical Characteristics
Parameter
Symbol
Test Conditions
Min
Typ
Max
Units
Dark Current
ID
VR = 10 mV
1
30
pA
Sensitivity
S
λ = 500 nm
λ = 600 nm
0.3
0.4
A/W
Internal Quantum Efficiency
QEint
450 nm
≤ λ ≤ 750 nm
95
100
%
Sensitivity Uniformity
Channel-to-Channel
at wavelength
±2.0
%
CrossTalk*
Channel-to-Channel
400~850nm
Adjacent Channels
Non-adjacent Channels
0.02
0.002
0.1
0.01
%
CrossTalk*
Channel-to-Channel
850~1100nm
Adjacent Channels
Non-adjacent Channels
0.2
0.02
1.0
0.5
%
Reverse Breakdown Voltage
BVR
IR = 10 A
20
V
Forward Voltage Uniformity
VF
IF = 1 mA
±1.0
±5.0
%
Shunt Resistance
RS
VR = ± 10 mV
500
4,000
M
Noise Equivalent Power
NEP
λ = 480 nm
1 x 10
-14
2 x 10
-14
W/√Hz
Response Time
tR
VR = 0 V, Load ≤ 100 k
1
5
s
Response Time
tR
VR = 5 V, Load ≤ 1 k
5
20
ns
Capacitance
Cj
VR = 5 V, f = 1KHz~1 MHz
VR = 0 V, f = 1KHz~1 MHz
10
18
20
30
pF
Tempco of Dark Current
VR = 10 mV
1.07
times/°C
Tempco of Sensitivity
430~850nm, T= 20°C to 45°C
±0.05
%/°C
*Cross talk measured with 0.001” diameter spot centered on active area.
Specifications are subject to change without notice. Please consult the website or factory for current information.
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