参数资料
型号: SCA1N3595US
厂商: SEMICOA CORP
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: 0.125 A, 125 V, SILICON, SIGNAL DIODE
封装: HERMETIC SEALED, GLASS, SMT, 2 PIN
文件页数: 1/2页
文件大小: 629K
代理商: SCA1N3595US
PRELIMINA
RY
FEATURES
Superior construction with tungsten slugs
Category-I metallurgical bonds
Hermetical sealed glass package
Controlled forward voltage drop
SCA1N3595
RECTIFIER
Ultra Low Leakage
Radiation Hardness Assured
PACKAGING
DESCRIPTION
This “high reliability ultra low leakage” rectifier diode is suitable for numerous applications in space and military area.
Constructed in glass packages using an internal category-I metallurgical bond as tested per MIL-PRF-19500, this recti-
fier offers the working peak reverse voltage of 125V with 150mA maximum current rating. These devices are also
available in SMT packages and bare die to meet the most stringent applications.
DIODES
APPLICATIONS
Space, military and other high-reliability
applications
Instrumentation applications requiring low leakage
current and high voltage isolation
Axial lead
SMT (US)
Highly stable reverse breakdown characteristics
Also provided in various surface mount type
packages and bare die
Radiation hard version is available
SMT (Other)
Bare die for HYBRID
manufacturers
Electrical Characteristics
Operating Conditions
min
typ
max
unit
symbol
Reverse current
Rated VRWM, TA=+25°C
-
TBD
1.0
nA
IR1
Rated VRWM, TA=+150°C
-
TBD
3.0
uA
IR2
Forward voltage drop
IF=200mA, TA=+25°C
0.83
TBD
1
V
VF1
IF=100mA, TA=+25°C
0.79
TBD
0.92
V
VF2
IF=50mA, TA=+25°C
0.74
TBD
0.88
V
VF3
IF=10mA, TA=+25°C
0.65
TBD
0.80
V
VF4
IF=5mA, TA=+25°C
0.60
TBD
0.765
V
VF5
IF=1mA, TA=+25°C
0.52
TBD
0.70
V
VF6
Breakdown voltage
IR=100uA, TA=-55°C
150
TBD
-
VBR1
Junction capacitance
VBR=0V, f=1MHz
-
TBD
8.0
pF
Cj
Switching Characteristics
Reverse recovery time
IF=10mA, VR=35V
3
usec
Trr
Disclaimer: The information and specs on this data sheet is for preliminary use and actual specs may be
changed at any time without notice and final specs will be determined at time of order.
Oct 2010
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