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参数资料
| 型号： | SCA1N5811US |
| 厂商： | SEMICOA CORP |
| 元件分类： | 整流器 |
| 英文描述： | 3 A, 150 V, SILICON, RECTIFIER DIODE |
| 封装： | HERMETIC SEALED, GLASS, SMT, 2 PIN |
| 文件页数： | 1/2页 |
| 文件大小： | 609K |
| 代理商： | SCA1N5811US |
PRELIMINA
RY
FEATURES
Superior construction with tungsten slugs
Category-I metallurgical bonds
Hermetical sealed glass package
Low forward voltage drop
SCA1N5807
*
SCA1N5809
*
SCA1N5811
RECTIFIERS
High Power / Ultra Fast Recovery
Radiation Hardness Assured
PACKAGING
DESCRIPTION
This “high reliability ultra fast recovery” rectifier diode family is superior in leakage current and suitable for numerous
applications in space and military area. Constructed in glass packages using an internal category-I metallurgical bond
tested per MIL-PRF-19500, these rectifiers offer the working peak reverse voltage from 50 to 150V with 6.0A maxi-
mum current rating and ultra fast switching characteristics. These devices are also available in SMT packages and bare
dies to meet the most stringent applications .
DIODES
APPLICATIONS
Space, military and other high-reliability
applications
Ultra fast switching power supplies requiring low
forward voltage drop
Axial lead
SMT (US)
Highly stable reverse breakdown characteristics
Fast switching with no snap-off
High forward surge capability
Also provided in various surface mount type
packages and bare die
Radiation hard version is available
SMT (Other)
Bare die for HYBRID
manufacturers
Electrical Characteristics
Operation Conditions
min
typ
max
unit
symbol
Reverse current
Rated VRWM, TA=+25°C
-
TBD
5
uA
IR1
Rated VRWM, TA=+125°C
-
TBD
525
uA
IR2
Forward voltage drop
IF=3A, TA=+25°C
-
TBD
0.865
V
VF3
IF=4A, TA=+25°C
-
TBD
0.875
V
VF4
IF=6A, TA=+25°C
-
TBD
0.925
V
VF5
IF=4A, TA=+125°C
-
TBD
0.800
V
VF7
IF=4A, TA=-65°C
TBD
1.075
V
VF9
Breakdown voltage
SCA1N5807
IBR=100uA, TA=+25°C
60
TBD
-
V
VBR1
SCA1N5809
IBR=100uA, TA=+25°C
110
TBD
-
V
SCA1N5811
IBR=100uA, TA=+25°C
160
TBD
-
V
SCA1N5807
IBR=100uA, TA=-65°C
50
TBD
-
V
VBR2
SCA1N5809
IBR=100uA, TA=-65°C
100
TBD
-
V
SCA1N5811
IBR=100uA, TA=-65°C
150
TBD
-
V
Junction capacitance
VBR=10V, f=1MHz
-
TBD
60
pF
Cj
Switching Characteristics
Reverse recovery time
IF=IRM=1A, IREC=0.1A
TBD
30
nsec
Trr
Forward recovery voltage
Tr=8ns, IF=500mA
TBD
2.2
V
V(peak)
Forward recovery time
Tr=8ns, IF=500mA
TBD
15
nsec
Tfr
相关PDF资料 |
PDF描述 |
|---|---|
| SCA1N5807US | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| SCA1N5811 | 3 A, 150 V, SILICON, RECTIFIER DIODE |
| SCA1N5807 | 3 A, 50 V, SILICON, RECTIFIER DIODE |
| SCAS15FF | 18 A, SILICON, BRIDGE RECTIFIER DIODE |
| SCAS4 | 18 A, SILICON, BRIDGE RECTIFIER DIODE |
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