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参数资料
| 型号： | SCP-6115 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 桥式整流 |
| 英文描述： | 3 PHASE, 36 A, SILICON, BRIDGE RECTIFIER DIODE |
| 文件页数： | 1/3页 |
| 文件大小： | 107K |
| 代理商： | SCP-6115 |
SENSITRON
SEMICONDUCTOR
Part Number: SCP-6115, Rev. -
221 West Industry Court
Deer Park, NY 11729
(631) 586 7600 FAX (631) 242 9798
World Wide Web Site - http://www.sensitron.com E-mail Address - sales@sensitron.com
SCP-6115
3 Phase Full Wave Bridge Rectifier Module with Fuse
Features
Excellent Thermal Performance
Compact package, Low Weight
Isolated base plate: 1500V
Safety Feature: Built-in Fuse in each AC leg to fail open under fault
Maximum Ratings
(Tc=25
0C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Peak Inverse Voltage and DC Blocking Voltage Per Diode
BVCES
1100
-
V
Module Average Rectified Forward Current TC = 55
OC
TC = 100
OC
TC = 125
OC
IO
-
36
26
20
A
Peak Surge Current Per Diode Non-Repetitive tP = 8.3ms
IFSM
-
150
A
Peak Surge Current Per Diode Repetitive
IFRM
-
25
A
Fuse Rating on each leg Non-Repetitive tP = 8.3ms
IFUSE
-
400
-
A
Operating & Storage Temperature Range
TOP & TSTG
- 55
-
175
OC
Electrical Characteristics
(Tc=25
0C UNLESS OTHERWISE SPECIFIED)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
Instantaneous Forward Voltage IF =9A, tP = 300 s Pulse
TC = 25
OC
TC = 100
OC
VF1
VF2
-
1.40
-
1.70
1.55
V
Reverse Leakage Current VR = 1000V, tP = 300 s Pulse
TC = 25
OC
TC = 100
OC
IR1
IR2
-
2.0
50
A
Breakdown Voltage IR = 10 A, tP = 300 s Pulse
BVR
1100
-
V
Reverse Recovery Time
IF = 10A, di/dt = 10A / s, VR = 100V
tRR
-
0.6
1
s
Capacitance per Diode VR = 10V, f = 1 MHz
CT
-
80
200
pF
Package Characteristics
Thermal Impedance (Junction to Base) per Diode
IH = 15A, tH = 5ms
ZθJB
-
0.80
OC/W
Module Thermal Resistance (Junction to Base)
RθJB
-
0.84
OC/W
Isolation to Base Plate
Viso
-
1500
V
Module Weight
M
-
10
gms
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