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参数资料
| 型号： | SD0230LWS/D5 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封装： | PLASTIC PACKAGE-2 |
| 文件页数： | 1/1页 |
| 文件大小： | 22K |
| 代理商： | SD0230LWS/D5 |
SD0230LWS
Vishay Semiconductors
formerly General Semiconductor
Document Number 88239
www.vishay.com
15-May-02
1
New Product
Schottky Diode
Features
Low turn-on voltage
Fast switching
Microminiature plastic package
This device is protected by a PN junction guard ring
against excessive voltage, such as electrostatic discharge.
Ideal for protection of MOS devices, steering,
biasing, and coupling diodes for fast switching and
low logic level applications.
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Continuous Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Forward Surge Current, tp = 10 ms
IFSM
2A
Power Dissipation TC = 25°CPtot
150
mW
Thermal Resistance Junction to Ambient Air
R
ΘJA
650
°C/W
Junction Temperature
TJ
125
°C
Storage Temperature Range
TS
–55 to +150
°C
Note: (1) Valid provided that electrodes are kept at ambient temperature
Mechanical Data
Case: SOD-323 plastic package
Weight: approximately 0.004g
Marking Code: SD
Packaging Codes/Options:
D5/10K per 13” reel (8mm tape)
D6/3K per 7” reel (8mm tape)
.
006
(0.
15)
ma
x
.
.010 (0.25)
min.
.012 (0.3)
.076
(1.95)
.112
(2.85)
.059 (1.5)
.004
(0.1)
max.
.
049
(1.
25)
ma
x
.
Cathode Band
Top View
.100
(2.55)
.0
6
5
(
1
.65)
.043 (1.1)
0.055
(1.40)
0.062
(1.60)
0.047
(1.
20)
Pad Layout SOD-323
SOD-323
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Reverse Breakdown Voltage
BVR
IR = 100
A30
——
V
Leakage Current
IR
VR = 30 V
——
5.0
A
IF = 15 mA
—
320
350
Forward Voltage
VF
IF = 50 mA
—
370
400
mV
IF = 150 mA
—
440
460
IF = 200 mA
—
470
500
Junction Capacitance
Ctot
VR = 1 V, f = 1.0 MHz
—
25
30
pF
Dimensions in inches
and (millimeters)
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