参数资料
型号: SD100-11-31-221
元件分类: 光敏二极管
英文描述: PHOTO DIODE
文件页数: 1/3页
文件大小: 81K
代理商: SD100-11-31-221
High Speed PIN Photodiodes
Specifications
Responsivity:
0.50 A/W minimum, 0.55 A/W typical @ 900nm. YAG enhanced are available for
.35 A/W @ 1064nm on a custom basis.
Series Resistance:
100
maximum (measured by applying +10mA to photodiode and measuring
voltage across anode and cathode)
Part Number
Active Area
Storage &
Operating
Temp.
Dark Current1
@ 50V
Breakdown
Voltage2
@ 10
A
Capacitance3
(typ)
NEP4
Max. Linear
Current5
Response Time6
@ 60V
.
in.
(mm)
(C
° )
(typ)
(nA)
(max)
(nA)
(typ)
(V)
at 0V
(pF)
at 50V
(pF)
(typ)
(W/
√Hz)
(typ)
(mA)
(typ)
(nsec)
SD 020-11-33-211
0.020 (dia.)
(.5 dia.)
-40 to 110
0.5
2.0
75
2.1
0.3
2.4x10-14
0.002
2
SD 041-11-33-211
0.040 x 0.033
(1.0 x .833)
-40 to 110
2.0
8.0
75
5.6
0.5
4.8x10-14
0.008
4
SD 076-11-31-211
0.105 x 0.043
(2.66 x 1.09)
-40 to 110
8.0
30
75
17
2.5
1.0x10-13
0.029
4
SD 100-11-31-221
0.100 (dia.)
(2.54 dia.)
-40 to 110
12
50
75
28
3.5
1.3x10-13
0.051
4
SD 172-11-31-221
0.185 x 0.125
(4.7 x 3.18)
-40 to 110
35
147
75
82
10
2.0x10-13
0.15
4
SD 200-11-31-241
0.200 (dia.)
(5.08 dia.)
-40 to 110
50
200
75
110
11
3.0x10-13
0.20
4
SD 290-11-31-241
0.300 x 0.220
(7.62 x 5.58)
-40 to 110
110
425
75
235
22
3.8x10-13
0.43
6
1.
Dark Current varies with temperature as follows: for T>23
° C, I
D=1.09
TI
D23, and for T<23° C, ID=ID23/1.09
T, where T is the temperature difference from 23°
C, and ID23 is the dark current at 23° C.
2.
Typical values listed. Minimum value shall be 50V.
3.
Typical values are listed in the table. Maximum value is 20% higher than the typical value.
4.
Test conditions are VB=50V and 950nm.
5.
Maximum linear current specifies the level above which the output current deviates more than 10%.
Short circuit current saturates at approximately 10 times this level.
6.
Response times listed are for the rising or falling edge, and were measured at 830nm with a 50
load. Shorter wavelengths will result in faster rise and fall times.
High Speed PIN
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