参数资料
型号: SD101BW-V-GS18
厂商: VISHAY SEMICONDUCTORS
元件分类: 参考电压二极管
英文描述: 0.03 A, 50 V, SILICON, SIGNAL DIODE
封装: ROHS COMPLIANT PACKAGE-2
文件页数: 2/4页
文件大小: 55K
代理商: SD101BW-V-GS18
www.vishay.com
2
Document Number 85679
Rev. 1.6, 05-Aug-10
SD101AW-V, SD101BW-V, SD101CW-V
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
3001)
K/W
Junction temperature
Tj
1251)
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Reverse breakdown voltage
IR = 10 A
SD101AW-V
V(BR)
60
V
SD101BW-V
V(BR)
50
V
SD101CW-V
V(BR)
40
V
Leakage current
VR = 50 V
SD101AW-V
IR
200
nA
VR = 40 V
SD101BW-V
IR
200
nA
VR = 30 V
SD101CW-V
IR
200
nA
Forward voltage drop
IF = 1 mA
SD101AW-V
VF
410
mV
SD101BW-V
VF
400
mV
SD101CW-V
VF
390
mV
IF = 15 mA
SD101AW-V
VF
1000
mV
SD101BW-V
VF
950
mV
SD101CW-V
VF
900
mV
Diode capacitance
VR = 0 V, f = 1 MHz
SD101AW-V
CD
2pF
SD101BW-V
CD
2.1
pF
SD101CW-V
CD
2.2
pF
Reverse recovery time
IF = IR = 5 mA, recover to 0.1 IR
trr
1ns
Figure 1. Typical Variation of Forward Current vs. Forward Voltage
0.01
0.1
1
10
0
0.4
0.6
0.8
1.0
0.2
A
B
C
I
-
F
o
rw
ard
C
u
rrent
(mA)
F
VF - Forward Voltage (V)
18477
Figure 2. Typical Forward Conduction Curve
A
B
C
0
0.4
0.6
0.8
1.0
0.2
60
20
80
40
0
100
I
-
For
w
ard
C
u
rrent
(mA)
F
VF - Forward Voltage (V)
18478
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