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参数资料
| 型号： | SD103BWS-T1 |
| 厂商： | SENSITRON SEMICONDUCTOR |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.35 A, 30 V, SILICON, SIGNAL DIODE |
| 封装： | ULTRA SMALL, PLASTIC PACKAGE-2 |
| 文件页数： | 1/3页 |
| 文件大小： | 88K |
| 代理商： | SD103BWS-T1 |
SD103AWS - SD103CWS
SCHOTTKY BARRIER SWITCHING DIODE
Features
Low Forward Voltage Drop
Guard Ring Construction for
Transient Protection
Negligible Reverse Recovery Time
Low Reverse Capacitance
Ultra-Small Surface Mount Package
Case: SOD-323, Plastic
Polarity: Cathode Band
Leads: Solderable per MIL-STD-202,
Method 208
SD103AWS Marking: S4
SD103BWS Marking: S5 or S4
SD103CWS Marking: S6 or S5 or S4
Weight: 0.004 grams (approx.)
Mechanical Data
Maximum Ratings @ TA = 25°C unless otherwise specified
Notes:
1. Valid provided that leads are kept at ambient temperature.
2. Test period <3000ms.
Electrical Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Symbol
SD103AWS
SD103BWS
SD103CWS
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
40
30
20
V
RMS Reverse Voltage
VR(RMS)
28
21
14
V
Forward Continuous Current (Note 1)
IFM
350
mA
Non-Repetitive Peak Forward Surge Current @ t 1.0s
IFSM
1.5
A
Power Dissipation (Note 1)
Pd
200
mW
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
625
°C/W
Operating and Storage Temperature Range
Tj,TSTG
-65 to +125
°C
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Reverse Breakdown Voltage (Note 2)
SD103AWS
SD103BWS
SD103CWS
V(BR)R
40
30
20
V
IR = 10mA
Forward Voltage Drop
VFM
0.37
0.60
V
IF = 20mA
IF = 200mA
Peak Reverse Current
SD103AWS
SD103BWS
SD103CWS
IRM
5.0
mA
VR = 30V
VR = 20V
VR = 10V
Junction Capacitance
Cj
50
pF
VR = 0V, f = 1.0MHz
Reverse Recovery Time
trr
10
ns
IF = IR = 200mA,
Irr = 0.1 x IR,RL = 100W
A B
C
D
E
G
H
J
SOD-323
Dim
MinMax
A
2.30
2.70
B
1.60
1.80
C
1.20
1.40
D
1.05 Typical
E
0.25
0.35
G
0.20
0.40
H
0.10
0.15
J
0.05 Typical
All Dimensions in mm
SENSITRON
SEMICONDUCTOR
221 West Industry Court ! Deer Park, NY 11729-4681 ! (631) 586-7600 FAX (631) 242-9798
World Wide Web Site - http://www.sensitron.com E-Mail Address - sales@sensitron.com
Data Sheet 2922, Rev. -
相关PDF资料 |
PDF描述 |
|---|---|
| SD103CWS-T1 | 0.35 A, 20 V, SILICON, SIGNAL DIODE |
| SD103C-35T/B | 0.35 A, 20 V, SILICON, SIGNAL DIODE, DO-35 |
| SD103C-35T/R13 | 0.35 A, 20 V, SILICON, SIGNAL DIODE, DO-35 |
| SD103A-35T/R13 | 0.35 A, 40 V, SILICON, SIGNAL DIODE, DO-35 |
| SD103B-35T/B | 0.35 A, 30 V, SILICON, SIGNAL DIODE, DO-35 |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SD103BWS-T3 | 制造商:WTE 制造商全称:Won-Top Electronics 功能描述:SURFACE MOUNT SCHOTTKY BARRIER DIODE |
| SD103BWS-TP | 功能描述:肖特基二极管与整流器 350mA 30V RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
| SD103BWS-V | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Schottky Diodes |
| SD103BWS-V-G | 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Small Signal Schottky Diodes |
| SD103BWS-V-GS08 | 功能描述:肖特基二极管与整流器 30mA 30 Volt RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel |
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