参数资料
型号: SD103C-TAP
厂商: VISHAY SEMICONDUCTORS
元件分类: 二极管(射频、小信号、开关、功率)
英文描述: SILICON, SIGNAL DIODE, DO-35
封装: HALOGEN FREE AND ROHS COMPLIANT PACKAGE-2
文件页数: 2/6页
文件大小: 170K
代理商: SD103C-TAP
www.vishay.com
2
Document Number 85754
Rev. 1.6, 23-Jul-10
SD103A, SD103B, SD103C
Vishay Semiconductors
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that leads at a distance of 4 mm from case are kept at ambient temperature
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
3101)
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
Parameter
Test condition
Part
Symbol
Min.
Typ.
Max.
Unit
Reverse Breakdown Voltage
IR = 50 A
SD103A
V(BR)
40
V
SD103B
V(BR)
30
V
SD103C
V(BR)
20
V
Leakage current
VR = 30 V
SD103A
IR
5A
VR = 20 V
SD103B
IR
5A
VR = 10 V
SD103C
IR
5A
Forward voltage drop
IF = 20 mA
VF
370
mV
IF = 200 mA
VF
600
mV
Diode capacitance
VR = 0 V, f = 1 MHz
CD
50
pF
Reverse recovery time
IF = IR = 50 to 200 mA,
recover to 0.1 IR
trr
10
ns
Figure 1. Forward Current vs. Forward Voltage
I F
-
For
w
ard
C
u
rrent
(mA)
0 100 200 300 400 500 600 700 800 900 1000
V
F - Forward Voltage (mV)
16765
1000
100
10
1
0.1
0.01
0.001
Figure 2. Forward Current vs. Forward Voltage
I F
-
For
w
ard
C
u
rrent
(A)
0
1
2
3
4
5
0.0
0.5
1.0
1.5
2.0
V
F - Forward Voltage (V)
16766
相关PDF资料
PDF描述
SD103C-TR SILICON, SIGNAL DIODE, DO-35
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