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参数资料
| 型号： | SD106WS-GS18 |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 二极管(射频、小信号、开关、功率) |
| 英文描述： | 0.2 A, SILICON, SIGNAL DIODE |
| 封装： | ROHS COMPLIANT, MICRO MINIATURE, PLASTIC PACKAGE-2 |
| 文件页数： | 1/5页 |
| 文件大小： | 275K |
| 代理商： | SD106WS-GS18 |
SD106WS
Document Number 85685
Rev. 1.3, 12-Dec-05
Vishay Semiconductors
www.vishay.com
1
17431
Small Signal Schottky Diode
Features
Low turn-on voltage
Fast switching
This device is protected by a PN junction
guard ring against excessive voltage,
such as electrostatic discharge
Ideal for precaution of MOS devices, steering,
biasing, and coupling diodes for fast switching and
low logic level application
Microminiature plastic package
Lead (Pb)-free component
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Mechanical Data
Case: SOD-323 Plastic case
Weight: approx. 5.0 mg
Packaging Codes/options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
1) Valid provided that electrodes are kept at ambient temperature.
Part
Ordering code
Type Marking
Remarks
SD106WS
SD106WS-GS18 or SD106WS-GS08
S2
Tape and Reel
Parameter
Test condition
Symbol
Value
Unit
Continuous reverse voltage
VR
30
V
Forward current
IF
200
mA
Forward surge current
tp = 10 ms
IFSM
1.0
A
Power dissipation
TC = 25 °C
Ptot
2501)
mW
Parameter
Test condition
Symbol
Value
Unit
Thermal resistance junction to ambient air
RthJA
5001)
K/W
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 65 to + 125
°C
e3
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相关代理商/技术参数 |
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