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参数资料
| 型号： | SD12CT1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/3页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 350W 12V ESD SOD-323 |
| 产品变化通告： | Discontinuation 30/Jun/2006 |
| 标准包装： | 3,000 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 350W |
| 电极标记： | 双向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 带卷 (TR) |
SD12CT1
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s @ T L ≤ 25 ° C
IEC 61000?4?2 (ESD)
IEC 61000?4?4 (EFT)
Total Device Dissipation FR?5 Board,
(Note 1) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance from Junction?to?Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Air
Contact
Symbol
P pk
P D
R q JA
T J , T stg
T L
Value
350
± 30
± 30
40
200
1.5
635
?65 to +150
260
Unit
W
kV
A
mW
mW/ ° C
° C/W
° C
° C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Minimum Solder Footprint.
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol
Parameter
I PP
I
I PP
V C
V RWM
Maximum Reverse Peak Pulse Current
Clamping Voltage @ I PP
Working Peak Reverse Voltage
I T
V C V BR V RWM I R
I R V
I T
RWM V BR V C
V
I R
V BR
Maximum Reverse Leakage Current @ V RWM
Breakdown Voltage @ I T
I T
Q V BR
Test Current
Maximum Temperature Variation of V BR
I PP
Bi?Directional TVS
ELECTRICAL CHARACTERISTICS (T J = 25 ° C, unless otherwise specified)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Reverse Working Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage
Additional Clamping Voltage
Maximum Peak Pulse Current
Capacitance
(Note 2)
I T = 1 mA, (Note 3)
V RWM = 12 V
I PP = 5 A, (8 x 20 m sec Waveform)
I PP = 15 A, (8 x 20 m sec Waveform)
8 x 20 m sec Waveform
V R = 0 V, f = 1 MHz
V RWM
V BR
I R
V C
I PP
C j
13.3
64
12
1.0
19
24
15
V
V
m A
V
A
pF
V R = 12 V, f = 1 MHz
36
2. TVS devices are normally selected according to the working peak reverse voltage (V RWM ), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V BR is measured at pulse test current I T .
http://onsemi.com
2
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相关代理商/技术参数 |
参数描述 |
|---|---|
| SD12CT1_07 | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Transient Voltage Suppressor |
| SD12CT1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 12V Bidirectional ESD Protection Diode RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SD12CT1G-CUT TAPE | 制造商:ON 功能描述:SD12CT1 Series 7.3 V 350 W Transient Voltage Suppressor Diode - SOD-323 |
| SD12CTC | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD12CTG | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
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