参数资料
| 型号： | SD12T1 |
| 厂商： | ON Semiconductor |
| 文件页数： | 2/4页 |
| 文件大小： | 0K |
| 描述： | TVS ZENER 350W 12V ESD SOD323 |
| 标准包装： | 10 |
| 电压 - 反向隔离（标准值）： | 12V |
| 电压 - 击穿： | 13.3V |
| 功率（瓦特）： | 350W |
| 电极标记： | 单向 |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SC-76，SOD-323 |
| 供应商设备封装： | SOD-323 |
| 包装： | 剪切带 (CT) |
| 工具箱： | ZENESDA-KIT-ND - KIT ESD PROTECTION DEVICE DESIGN |
| 其它名称： | SD12T1OSCT |
SD05T1 Series
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20 m s (Note 1)
@ T L ≤ 25 ° C
IEC 61000 ? 4 ? 2 (ESD)
IEC 61000 ? 4 ? 4 (EFT)
ESD Voltage (Human Body Model (HBM) Waveform per IEC 61000 ? 4 ? 2)
Total Power Dissipation on FR ? 4 Board (Note 2) @ T A = 25 ° C
Derate above 25 ° C
Thermal Resistance, Junction ? to ? Ambient
Junction and Storage Temperature Range
Lead Solder Temperature ? Maximum (10 Second Duration)
Air
Contact
Symbol
P pk
V PP
° P D °
R q JA
T J , T stg
T L
Value
350
± 15
± 8.0
40
30
300
2.4
416
? 55 to +150
260
Unit
Watts
kV
A
kV
° mW °
mW/ ° C
° C/W
° C
° C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Other voltages may be available upon request.
1. Nonrepetitive current pulse, per Figure 6.
2. FR ? 4 printed circuit board, single ? sided copper, mounting pad 1 cm 2 .
ELECTRICAL CHARACTERISTICS
(T A = 25 ° C unless otherwise noted)
Symbol Parameter
I PP
Maximum Reverse Peak Pulse Current
V C
Clamping Voltage @ I PP
I F
I
I R V F
V RWM
I R
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ V RWM
V C V BR V RWM
I T
V
V BR
I T
Breakdown Voltage @ I T
Test Current
I F
V F
Forward Current
Forward Voltage @ I F
I PP
Uni ? Directional TVS
ELECTRICAL CHARACTERISTICS
Device
V RWM
(V)
I R @ V RWM
( m A)
V BR , Breakdown Voltage
(V)
Min Max
I T
mA
V C @ I PP = 5 A
(Note 3)
(V)
Max I PP
(Note 3)
(A)
V C @ Max I PP
(Note 3)
(V)
Max
Capacitance
(pF)
V R = 0 V
f = 1.0 MHz
SD05T1G
SD12T1G
5.0
12
10
1.0
6.2
13.3
7.3
15.75
1.0
1.0
9.8
19
24
15
14.5
25
350
150
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. 8 × 20 m s pulse waveform.
http://onsemi.com
2
相关PDF资料 |
PDF描述 |
|---|---|
| 3412.0123.26 | FUSE 4A 32V 0603 FAST |
| 3412.0122.26 | FUSE 3.5A 32V 0603 FAST |
| RGH1608-2C-P-301-B | RES 300 OHM 1/6W 0.1% 0603 SMD |
| NZL6V8AXV3T1 | TVS ZENER DUAL 73W 6.8V SC89 |
| AD8625AR | IC OPAMP JFET 5MHZ QUAD 14SOIC |
相关代理商/技术参数 |
参数描述 |
|---|---|
| SD12T1G | 功能描述:TVS 二极管 - 瞬态电压抑制器 ZENER TVS RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C |
| SD-12-T-2 | 制造商: 功能描述: 制造商:undefined 功能描述: |
| SD12TC | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
| SD12TFJHL-C1000-D | 制造商:Delkin Devices 功能描述:128MB - Bulk |
| SD12TG | 制造商:SEMTECH 制造商全称:Semtech Corporation 功能描述:Single Line TVS Diode for ESD Protection in Portable Electronics |
发布紧急采购，3分钟左右您将得到回复。